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Here is the first book to discuss the current understanding of silver metallization and its potential as a future interconnect material for integrated circuit technology. With the lowest resistivity of all metals, silver is an attractive interconnect material for higher current densities and faster switching speeds in integrated circuits. Over the past ten years, extensive research has been conducted to address the issues that have prevented silver from being used as an interconnect metal. The authors provide details on a wide range of experimental, characterization, and analysis techniques. The book is written for students, scientists, engineers, and technologists in the fields of integrated circuits and microelectronics research and development.
This title covers fundemental concepts, properties and applicabilities of metals and alloys for use in various metallization schemes. Metallizations form the key components on electronic circuits - controlling device properties and providing power and device interconnections with the outside world or with other devices. The recent advent of submicron dimensions and increasingly faster devices in the semiconductor have challenged researchers to keep metallization schemes in line with new demanding requirements.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The feature sizes of microelectronic devices have entered the deep submicron regime. The process integration and structure-properties control of the multilevel metal circuitry demand an interdisciplinary interaction and understanding between manufacturing and research. To realize the vision presented in the national technology road map, material and technological challenges will need to be overcome. For example Cu conductor and its barrier metals and low-dielectric constant insulators are at issue. For materials processing, chemical-mechanical planarization and low-temperature filling of high-aspect ratio vias are challenges. For materials examination, the metrology of submicron structures is nontrivial and for materials reliability, the interplay among multiple driving forces and the response in small-dimension microstructures are intriguing. These issues are the focus of this book from MRS. Topics include: road map, technology and metrology of submicron device structures; reliability issues for Cu metallization; Al interconnects and vias; barrier metal; interlevel low-K dielectrics and contact to Si and compound semiconductors.