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Here is the first book to discuss the current understanding of silver metallization and its potential as a future interconnect material for integrated circuit technology. With the lowest resistivity of all metals, silver is an attractive interconnect material for higher current densities and faster switching speeds in integrated circuits. Over the past ten years, extensive research has been conducted to address the issues that have prevented silver from being used as an interconnect metal. The authors provide details on a wide range of experimental, characterization, and analysis techniques. The book is written for students, scientists, engineers, and technologists in the fields of integrated circuits and microelectronics research and development.
Aggressive scaling of device and interconnect dimensions has resulted in many low dimensional issues in the nanometer regime. This book deals with various new generation interconnect materials and interconnect modeling and highlights the significance of novel nano interconnect materials for 3D integrated circuit design. It provides information about advanced nanomaterials like carbon nanotube (CNT) and graphene nanoribbon (GNR) for the realization of interconnects, interconnect models, and crosstalk noise analysis. Features: Focusses on materials and nanomaterials utilization in next generation interconnects based on Carbon nanotubes (CNT) and Graphene nanoribbons (GNR). Helps readers realize interconnects, interconnect models, and crosstalk noise analysis. Describes Hybrid CNT and GNR based interconnects. Presents the details of power supply voltage drop analysis in CNT and GNR interconnects. Overviews pertinent RF performance and stability analysis. This book is aimed at graduate students and researchers in electrical and materials engineering, nano/microelectronics.
This title covers fundemental concepts, properties and applicabilities of metals and alloys for use in various metallization schemes. Metallizations form the key components on electronic circuits - controlling device properties and providing power and device interconnections with the outside world or with other devices. The recent advent of submicron dimensions and increasingly faster devices in the semiconductor have challenged researchers to keep metallization schemes in line with new demanding requirements.
GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing