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Research progress on silicon crystal growth processes for photovoltaic applications and defect and impurity effects on PV performance is presented. Growth processes, in addition to thin-film silicon growth, include techniques for silicon-feedstock generation and a method for rapid, replenished Czochralski growth. We have produced research samples of silicon with low and very high dislocation densities for collaborative research with other institutes, and have also made samples with varying amounts of incorporated nitrogen and oxygen, again, for collaborative studies with university researchers, concerning the effects of these impurities on mechanical strength. Transition-metal doping of silicon for understanding metallic impurity effects on lifetime and cell performance is ongoing.
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Even though reports suggest that the silicon share will slowly decrease in the next twenty years, finding a way to manufacture a specific solar grade feedstock in large quantities, at a low cost while maintaining the quality needed, still remains a crucial issue. Thin film and quantum confinement-based silicon cells might be a complementary solution. Advanced Silicon Materials for Photovoltaic Applications has been designed to describe the full potentialities of silicon as a multipurpose material and covers: Physical, chemical and structural properties of silicon Production routes including the promise of low cost feedstock for PV applications Defect engineering and the role of impurities and defects Characterization techniques, and advanced analytical techniques for metallic and non-metallic impurities Thin film silicon and thin film solar cells Innovative quantum effects, and 3rd generation solar cells With contributions from internationally recognized authorities, this book gives a comprehensive analysis of the state-of-the-art of process technologies and material properties, essential for anyone interested in the application and development of photovoltaics.
Polycrystalline silicon (commonly called "polysilicon") is the material of choice for photovoltaic (PV) applications. Polysilicon is the purest synthetic material on the market, though its processing through gas purification and decomposition (commonly called "Siemens" process) carries high environmental risk. While many current optoelectronic applications require high purity, PV applications do not and therefore alternate processes and materials are being explored for PV grade silicon. Solar Silicon Processes: Technologies, Challenges, and Opportunities reviews current and potential future processing technologies for PV applications of solar silicon. It describes alternative processes and issues of material purity, cost, and environmental impact. It covers limits of silicon use with respect to high-efficiency solar cells and challenges arising from R&D activities. The book also defines purity requirements and purification processes of metallurgical grade silicon (MG-Si) and examines production of solar grade silicon by novel processes directly from MG-Si and/or by decomposition of silane gas in a fluidized bed reactor (FBR). Furthermore, the book: Analyzes past research and industrial development of low-cost silicon processes in view of understanding future trends in this field. Discusses challenges and probability of success of various solar silicon processes. Covers processes that are more environmentally sensitive. Describes limits of silicon use with respect to high-efficiency solar cells and challenges arising from R&D activities. Defines purity requirements and purification processes of MG-Si. Examines production of solar grade silicon directly from MG-Si.
A summary of the science, technology, and manufacturing of semiconductor silicon materials. Properties of silicon are detailed, and a set of silicon binary phase diagrams is included. Other aspects such as materials handling, safety, impurity, and defect reduction are also discussed.