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Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume 1 discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume first explores the relaxation of energy and the momentum of hot carriers and then turns to relaxation of plasmas and phonons. It also discusses the dynamics of excitons, polaritons, and excitonic molecules and reviews transient transport and diffusion of carriers. Scientists, engineers, and graduate students will find this book invaluable.
Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume II discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume discusses electronic relaxation in amorphous semiconductors and the physical mechanisms during and after the interaction of an intense laser pulse with a semiconductor. It also covers the relaxation of carriers in semiconductors; transient optical pulse propagation; and methods of time-resolved spectroscopy. Scientists, engineers, and graduate students will find this book invaluable.
Proceedings of the NATO Advanced Research Workshop, held in St. Petersburg, Russia, 13-16 June 2002
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
This handbook is a compendium giving a comprehensive description of the basics of semiconductor physics relevant to the design and analysis of thin film solar cell materials. It starts from the basics of material science, describing the material and its growth, defect and electrical properties, the basics of its interaction with photons and the involved statistics, proceeding to space charge effects in semiconductors and pn-junctions. Most attention is given to analyze homo- and hetero-junction solar cells using various models and applying the field-of-direction analysis for discussing current voltage characteristics, and helping to discover the involvement of high-field effects in solar cells. The comprehensive coverage of the main topics of - and relating to - solar cells with extensive reference to literature helps scientists and engineers at all levels to reach a better understanding and improvement of solar cell properties and their production. The author is one of the founders of thin film solar cell research.
Photonics is being labelled by many as the technology for the 21st century. Because of the structural flexibility both at the molecular and bulk levels, organic materials are emerging as a very important class of nonlinear optical materials to be used for generating necessary nonlinear optical functions for the technology of photonics. Since the last NATO advanced research workshop on "Polymers for Nonlinear Optics"held in June 1988, at Nice - Sophia Antipolis, France. there has been a tremendous growth of interest worldwide and important development in this field. Significant progress has been made in theoretical modeling, material development, experimental studies and device concepts utilizing organic materials. These important recent developments provided the rationale for organizing the workshop on "Organic Materials for Nonlinear Optics and Photonics" which was held in La Rochelle, France, in August 1990. This proceeding is the outcome of the workshop held in La Rochelle. The objective of the workshop was to bring together scientists and engineers of varied backgrounds working in this field in order to assess the current status of this field by presenting significant recent developments and make recommendations on future directions of research. The workshop was multidisciplinary as it had contributions from chemists, physicists, materials scientists and device engineers. The participants were both from industries and universities. The workshop included plenary lectures by leading international scientists in this field, contributed research papers and a poster session. Panel discussion groups were organized to summarize important developments and to project future directions.
Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume 1 discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume first explores the relaxation of energy and the momentum of hot carriers and then turns to relaxation of plasmas and phonons. It also discusses the dynamics of excitons, polaritons, and excitonic molecules and reviews transient transport and diffusion of carriers. Scientists, engineers ...
Contemporary Nonlinear Optics discusses the different activities in the field of nonlinear optics. The book is comprised of 10 chapters. Chapter 1 presents a description of the field of nonlinear guided-wave optics. Chapter 2 surveys a new branch of nonlinear optics under the heading optical solitons. Chapter 3 reviews recent progress in the field of optical phase conjugation. Chapter 4 discusses ultrafast nonlinear optics, a field that is growing rapidly with the ability of generating and controlling femtosecond optical pulses. Chapter 5 examines a branch of nonlinear optics that may be termed nonlinear quantum optics. Chapter 6 reviews the new field of photorefractive adaptive neural networks. Chapter 7 presents a discussion of recent successes in the development of nonlinear optical media based on organic materials. Chapter 8 reviews the field of nonlinear optics in quantum confined structures. Chapter 9 reviews the field of nonlinear laser spectroscopy, with emphasis on advances made during the 1980s. Finally, Chapter 10 reviews the field of nonlinear optical dynamics by considering nonlinear optical systems that exhibit temporal, spatial, or spatio-temporal instabilities. This book is a valuable source for physicists and other scientists interested in optical systems and neural networks.
There are many books in the market devoted to the review of certain fields. This book is different from those in that authors not only provide reviews of the fields but also present their own important contributions to the fields in a tutorial way. As a result, researchers who are already in the field of ultrafast dynamics in semicon ductors and its device applications as well as researchers and graduate students just entering the field will benefit from it. This book is made up of recent new developments in the field of ultrafast dynamics in semiconductors. It consists of nine chapters. Chapter 1 reviews a mi croscopic many-body theory which allows one to compute the linear and non-linear optical properties of semiconductor superlattices in the presence of homogeneous electric fields. Chapter 2 deals with ultrafast intersubband dynamics in quantum wells and device structures. Chapter 3 is devoted to Bloch oscillations in semicon ductors and their applications. Chapter 4 discusses transient electron transport phe nomena, such as electron ballistic transport and electron velocity overshoot phe nomena as well as non-equilibrium phonon dynamics in nanostructure semicon ductors. Chapter 5 reviews experimental and theoretical work on the use of the phase properties of one or more ultrashort optical pulses to generate and control electrical currents in semiconductors.