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This book analyzes the thermal characteristics of power electronic devices (PEDs) with a focus on those used in wind and solar energy systems. The authors focus on the devices used in such applications, for example boost converters and inverters under different operating conditions. The book explains in detail finite element modeling techniques, setting up measuring systems, data analysis, and PEDs’ lifetime calculations. It is appropriate reading for graduate students and researchers who focus on the design and reliability of power electronic devices.
This book discusses the significant aspects of thermal transient testing, the most important method of thermal characterization of electronics available today. The book presents the theoretical background of creating structure functions from the measured results with mathematical details. It then shows how the method can be used for thermal qualification, structure integrity testing, determining material parameters, and calibrating simulation models. General practical questions about measurements are discussed to help beginners carry out thermal transient testing. The particular problems and tricks of measuring with various electronic components, such as Si diodes, bipolar transistors, MOS transistors, IGBT devices, resistors, capacitors, wide bandgap materials, and LEDs, are covered in detail with the help of various use cases. This hands-on book will enable readers to accomplish thermal transient testing on any new type of electronics and provides the theoretical details needed to understand the opportunities and limitations offered by the methodology. The book will be an invaluable reference for practicing engineers, students, and researchers.
Presentation slides from the Devices, Circuits and Systems track at the ETCMOS 2016 conference in Montreal, May 25-27, 2016
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.