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Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a ""quasi-equilibrium"" condition is inappreciably different from that of thermal equilibrium itself. Thus the results of Part I are not invalidated when the properties of a semiconductor are measured using small current densities. Part II considers non-equilibrium statistics for semiconductors with appreciable excess carrier densities. The various kinds of recombination mechanism are examined, and the consequences discussed for steady state and transient situations. The subject matter of this book was deliberately restricted in scope in order to be of maximum value to scientists with an active interest in the basic properties of semiconducting materials.
In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination. 1962 edition.
This Data Handbook is a updated and largely extended new edition of the book "Semiconductors: Basic Data". The data of the former edition have been updated and a complete representation of all relevant basic data is now given for all known groups of semiconducting materials.
This Book Gives A Clear And Logical Exposition Of The Basic Method Of Ensembles In Statistical Mechanics As Developed By J.W. Gibbs. Beginning With The Liouville Theorem, A Brief But Useful Introduction To The Classical Statistical Mechanics Is Provided. Then The Quantum Picture Is Outlined And Basic Postulate Of Quantum Statistical Mechanics Are Stated. The Discussion Of The Symmetry Of Wave Function And Its Effect On Counting Is Given In Detail.The Relation Between Statistical Mechanics And Thermodynamics Is Worked Out And The Gibbs Paradox Is Discussed In A Lucid Way. The Concept Of Entropy Is Related To The Information Theory. Various Ensembles Are Constructed And Used To Derive The Bose-Einstein And Fermi-Dirac Ideal Gases, Topics Like Liquid He Electrons In Metals, And White Dwarfs Are Given Adequate Coverage. Quantum Hall Effect, Random Walk And Fourier Analysis Of A Random Fluctuation Are Devoted Sufficient Space To Make It A Useful And Fascinating Book. The Book Concludes With A Discussion Of The Sling Model And A Modern Treatment Of The Critical Phenomena. Problems At The End Of Each Chapter Widen The Area Covered And Also Help To Deepen The Understanding Of The Material Given. This Book Is Written To Introduce The Subject To Advanced Undergraduates In Physics And Chemistry Or To Graduates In Engineering Classes. The Present Edition Contains New Material Including A Chapter On Irreversible Thermodynamics And Sections Dealing With Density Matrix And Superconductivity.
Elementary concepts in statistics and probability - The ising model and the lattice gas - Elements of thermodynamics - Statistical mechanics - The world of bosons - All about fermions : theories of metals, superconductors, semiconductors - Kinetic theory - The transfer matrix - Some uses of quantum field theory in statistical physics.
This volume presents an exposition of topics in industrial statistics. It serves as a reference for researchers in industrial statistics/industrial engineering and a source of information for practicing statisticians/industrial engineers. A variety of topics in the areas of industrial process monitoring, industrial experimentation, industrial modelling and data analysis are covered and are authored by leading researchers or practitioners in the particular specialized topic. Targeting the audiences of researchers in academia as well as practitioners and consultants in industry, the book provides comprehensive accounts of the relevant topics. In addition, whenever applicable ample data analytic illustrations are provided with the help of real world data.
Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.
This text presents statistical mechanics and thermodynamics as a theoretically integrated field of study. It stresses deep coverage of fundamentals, providing a natural foundation for advanced topics. The large problem sets (with solutions for teachers) include many computational problems to advance student understanding.
Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the next two analyze impurities in semiconductors. Then follow chapters on semiconductor statistics and on surfaces, interfaces and band offsets as they occur in heterojunctions. Chapters 8 to 19 report on newer topics (though a survey of transport properties of carriers is also included). Among these are transport of hot electrons, and thermoelectric effects including here and elsewhere properties of low-dimensional and mesoscopic structures. The electron-hole liquid, the quantum Hall effect, localisation, ballistic transport, coherence in superlattices, current ideas on tunnelling and on quantum confinement and scattering processes are also covered.