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Volume III/34 of Landolt-Börnstein summarizes our current knowledge of semiconductor quantum structures, a topic in applied condensed matter physics with steadily growing technological importance. The present subvolume 34A covers growth and structuring of semiconductor quantum structures. It contains a general introduction, and discussions of the growth and preparation of quasi-zero-dimensional structures (quantum dots), quasi-one-dimensional structures (quantum wires) and quasi-one-dimensional structures (quantum wells). Topics include relevant growth techniques and examples for group IV semiconductors, III-V semiconductor compounds, II-VI semiconductor compounds, I-VII semiconductor compounds and IV-VI semiconductor compounds.
Written by international experts, Physics and Applications of Semiconductor Quantum Structures covers the most important recent advances in the field. Beginning with a review of the evolution of semiconductor superlattices and quantum nanostructures, the book explores fabrication and characterization techniques, transport, optical, and spin-depende
Volume III/34 of Landolt-Börnstein summarizes our current knowledge of semiconductor quantum structures, a topic in applied condensed matter physics with steadily growing technological importance. The present subvolume 34A covers growth and structuring of semiconductor quantum structures. It contains a general introduction, and discussions of the growth and preparation of quasi-zero-dimensional structures (quantum dots), quasi-one-dimensional structures (quantum wires) and quasi-one-dimensional structures (quantum wells). Topics include relevant growth techniques and examples for group IV semiconductors, III-V semiconductor compounds, II-VI semiconductor compounds, I-VII semiconductor compounds and IV-VI semiconductor compounds.
Da die Nachfrage nach immer schnelleren und kleineren Halbleiterbauelementen stetig wächst, sind Quanten-Dots und -Pyramiden rasant in den Mittelpunkt der Halbleiterforschung gerückt. Dieses Buch vermittelt einen umfassenden Überblick über den aktuellen Forschungsstand auf diesem Gebiet. Behandelt werden u.a. Fragen, wie Strukturen aufgebaut, wie sie charakterisiert werden und wie sie die Leistungsfähigkeit der Bauelemente bestimmen. (11/98)
The development and application of low-dimensional semiconductors have been rapid and spectacular during the past decade. Ever improving epitaxial growth and device fabrication techniques have allowed access to some remarkable new physics in quantum confined structures while a plethora of new devices has emerged. The field of optoelectronics in particular has benefited from these advances both in terms of improved performance and the invention of fundamentally new types of device, at a time when the use of optics and lasers in telecommunications, broadcasting, the Internet, signal processing, and computing has been rapidly expanding. An appreciation of the physics of quantum and dynamic electronic processes in confined structures is key to the understanding of many of the latest devices and their continued development. Semiconductor Quantum Optoelectronics covers new physics and the latest device developments in low-dimensional semiconductors. It allows those who already have some familiarity with semiconductor physics and devices to broaden and expand their knowledge into new and expanding topics in low-dimensional semiconductors. The book provides pedagogical coverage of selected areas of new and pertinent physics of low-dimensional structures and presents some optoelectronic devices presently under development. Coverage includes material and band structure issues and the physics of ultrafast, nonlinear, coherent, intersubband, and intracavity phenomena. The book emphasizes various devices, including quantum wells, visible, quantum cascade, and mode-locked lasers; microcavity LEDs and VCSELs; and detectors and logic elements. An underlying theme is high-speed phenomena and devices for increased system bandwidths.
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow.
The 1984 Advanced Study Institute on "Electronic Structure, Dynamics and Quantum Structural Properties of Condensed Matter" took place at the Corsendonk Conference Center, close to the City of Antwerpen, from July 16 till 27, 1984. This NATO Advanced Study Institute was motivated by the research in my Institute, where, in 1971, a project was started on "ab-initio" phonon calculations in Silicon. I~ is my pleasure to thank several instances and people who made this ASI possible. First of all, the sponsor of the Institute, the NATO Scientific Committee. Next, the co-sponsors: Agfa-Gevaert, Bell Telephone Mfg. Co. N.V., C & A, Esso Belgium·, CDC Belgium, Janssens Pharmaceutica, Kredietbank and the Scientific Office of the U.S. Army. Special thanks are due to Dr. P. Van Camp and Drs. H. Nachtegaele, who, over several months, prepared the practical aspects of the ASI with the secretarial help of Mrs. R.-M. Vandekerkhof. I also like to. thank Mrs. M. Cuyvers who prepared and organized the subject and material index and Mrs. H. Evans for typing-assist ance. I express particular gratitude to Mrs. F. Nedee, who, like in 1981 and 1982, has put the magnificent Corsendonk Conference Center at our disposal and to Mr. D. Van Der Brempt, Director of the Corsendonk Conference Center, for the efficient way in which he and his staff took care of the practical organization at the Conference Center.
Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. Many books have taken on this task in the past, but their treatments tend either to pluck results from the literature and present them as received truths or to rely on unrealistically simple models. Bands and Photons in III-V Semiconductor Quantum Structures takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader would not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research in those fields. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader's understanding.
This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.