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In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.
The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.
The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec tronic modifications itinduces.
Statistical Thermodynamics of Semiconductor Alloys is the consideration of thermodynamic properties and characteristics of crystalline semiconductor alloys by the methods of statistical thermodynamics. The topics presented in this book make it possible to solve such problems as calculation of a miscibility gap, a spinodal decomposition range, a short-range order, deformations of crystal structure, and description of the order-disorder transitions. Semiconductor alloys, including doped elemental semiconductors are the basic materials of solid-state electronics. Their structural stability and other characteristics are key to determining the reliability and lifetime of devices, making the investigation of stability conditions an important part of semiconductor physics, materials science, and engineering. This book is a guide to predicting and studying the thermodynamic properties and characteristics of the basic materials of solid-state electronics. - Includes a complete and detailed consideration of the cluster variation method (CVM) - Provides descriptions of spinodal decomposition ranges of crystalline alloys - Presents a representation of thermodynamics characteristics and properties as a miscibility gap by using the different approximations of CVM - Covers a unique, detailed consideration of the valence force field model with the complete collection of formulas
III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. Because of their wide applications in a variety of devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. This new book covers all known information about phase relations in ternary systems based on III-V semiconductors. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists.
This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.
An introduction to the study of basic electronic and magnetic properties of complex materials such as alloys, their surfaces, interfaces, and extended defects. Part I explores theoretical background, with chapters on the linear muffin-tin orbital method, Green function method, coherent potential approximation, self- consistency within atomic sphere approximation, and relativistic theory. Part II is devoted to applications including magnetic properties, numerical implementation, and interatomic interactions in alloys. Of interest to researchers in solid state theory, surface science, and computational materials research. Annotation copyrighted by Book News, Inc., Portland, OR.
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.