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The book Smart Sensors and MEMS provides an unique collection of contributions on latest achievements in sensors area and technologies that have made by eleven internationally recognized leading experts from Czech Republic, Germany, Italy, Israel, Portugal, Switzerland, Ukraine and USA during the NATO Advanced Study Institute (ASI) in Povoa de Varzim, Portugal, from 8 to 19 September 2003. The aims of this volume are to disseminate wider and in-depth theoretical and practical knowledge about smart sensors and its applications, to create a clear consciousness about the effectiveness of MEMS technologies, advanced signal processing and conversion methods, to stimulate the theoretical and applied research in these areas, and promote the practical using of these techniques in the industry. With that in mind, a broad range of physical, chemical and biosensors design principles, technologies and applications were included in the book. It is a first attempt to describe in the same book different physical, chemical, biological sensors and MEMS technologies suitable for smart sensors creation. The book presents the state-of-the-art and gives an excellent opportunity to provide a systematic, in-depth treatment of the new and rapidly developing field of smart sensors and MEMS. The volume is an excellent guide for practicing engineers, researchers and students interested in this crucial aspect of actual smart sensor design.
A new generation of MEMS books has emerged with this cohesive guide on the design and analysis of micro-electro-mechanical systems (MEMS). Leading experts contribute to its eighteen chapters that encompass a wide range of innovative and varied applications. This publication goes beyond fabrication techniques covered by earlier books and fills a void created by a lack of industry standards. Subjects such as transducer operations and free-space microsystems are contained in its chapters. Satisfying a demand for literature on analysis and design of microsystems the book deals with a broad array of industrial applications. This will interest engineering and research scientists in industry and academia.
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
The revolution is well underway. Our understanding and utilization of microelectromechanical systems (MEMS) are growing at an explosive rate with a worldwide market approaching billions of dollars. In time, microdevices will fill the niches of our lives as pervasively as electronics do right now. But if these miniature devices are to fulfill their mammoth potential, today's engineers need a thorough grounding in the underlying physics, modeling techniques, fabrication methods, and materials of MEMS. The MEMS Handbook delivers all of this and more. Its team of authors-unsurpassed in their experience and standing in the scientific community- explore various aspects of MEMS: their design, fabrication, and applications as well as the physical modeling of their operations. Designed for maximum readability without compromising rigor, it provides a current and essential overview of this fledgling discipline.