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Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories. Across nine chapters, it covers: • SiC and IV-IV semiconductors, • III-GaN and nitride semiconductors, • III-V and II-VI semiconductors, • ZnO-based and GaO-based semiconducting oxides, • Graphene, ferroelectric oxides, and other emerging materials, • Wide-bandgap semiconductors of SiC, GaN, and ZnO, and • Ultra-wide gap semiconductors of AlN, Ga2O3, and graphene. Key achievements from the author and collaborators in the above fields are referred to and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy. Zhe Chuan Feng has had an impressive career spanning many years of important work in engineering and tech, including as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei; establishing the Science Exploring Lab; joining Kennesaw State University as an adjunct professor, part-time; and at the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. Currently, he is focusing on materials research for LED, III-nitrides, SiC, ZnO, other semiconductors/oxides, and nanostructures and has devoted time to materials research and growth of III-V and II-VI compounds, LED, III nitrides, SiC, ZnO, GaO, and other semiconductors/oxides. Professor Feng has also edited and published multiple review books in his field, alongside authoring scientific journal papers and conference/proceeding papers. He has organized symposiums and been an invited speaker at different international conferences and universities. He has also served as a guest editor for special journal issues.
Stimulated Raman Scattering Microscopy: Techniques and Applications describes innovations in instrumentation, data science, chemical probe development, and various applications enabled by a state-of-the-art stimulated Raman scattering (SRS) microscope. Beginning by introducing the history of SRS, this book is composed of seven parts in depth including instrumentation strategies that have pushed the physical limits of SRS microscopy, vibrational probes (which increased the SRS imaging functionality), data science methods, and recent efforts in miniaturization. This rapidly growing field needs a comprehensive resource that brings together the current knowledge on the topic, and this book does just that. Researchers who need to know the requirements for all aspects of the instrumentation as well as the requirements of different imaging applications (such as different types of biological tissue) will benefit enormously from the examples of successful demonstrations of SRS imaging in the book. Led by Editor-in-Chief Ji-Xin Cheng, a pioneer in coherent Raman scattering microscopy, the editorial team has brought together various experts on each aspect of SRS imaging from around the world to provide an authoritative guide to this increasingly important imaging technique. This book is a comprehensive reference for researchers, faculty, postdoctoral researchers, and engineers. Includes every aspect from theoretic reviews of SRS spectroscopy to innovations in instrumentation and current applications of SRS microscopy Provides copious visual elements that illustrate key information, such as SRS images of various biological samples and instrument diagrams and schematics Edited by leading experts of SRS microscopy, with each chapter written by experts in their given topics
are intended to fill the gap between a manufacturer's handbook, and review articles that highlight the latest scientific developments. A fourth volume will deal with techniques for specimen handling, beam artifacts, and depth profiling. It will provide a compilation of methods that have proven useful for specimen handling and treatment, and it will also address the common artifacts and problems associated with the bombardment of solid sur faces by photons, electrons, and ions. A description will be given of methods for depth profiling. Surface characterization measurements are being used increasingly in di verse areas of science and technology. We hope that this series will be useful in ensuring that these measurements can be made as efficiently and reliably as possible. Comments on the series are welcomed, as are suggestions for volumes on additional topics. C. J. Powell Gaithersburg, Maryland A. W. Czandema Golden, Colorado D. M. Hercules Pittsburgh, Pennsylvania T. E. Madey New Brunswick, New Jersey J. T. Yates, Jr.
Surveying and comparing all techniques relevant for practical applications in surface and thin film analysis, this second edition of a bestseller is a vital guide to this hot topic in nano- and surface technology. This new book has been revised and updated and is divided into four parts - electron, ion, and photon detection, as well as scanning probe microscopy. New chapters have been added to cover such techniques as SNOM, FIM, atom probe (AP),and sum frequency generation (SFG). Appendices with a summary and comparison of techniques and a list of equipment suppliers make this book a rapid reference for materials scientists, analytical chemists, and those working in the biotechnological industry. From a Review of the First Edition (edited by Bubert and Jenett) "... a useful resource..." (Journal of the American Chemical Society)
Raman spectroscopy has a number of applications in various fields including material science, physics, chemistry, biology, geology, and medicine. This book illustrates necessary insight and guidance in the field of Raman spectroscopy with detailed figures and explanations. This presents deep understanding of new techniques from basic introduction to the advance level for scientists and engineers. The chapters cover all major aspects of Raman spectroscopy and its application in material characterization with special emphasis on both the theoretical and experimental aspects. This book is aimed to provide solid foundation of Raman spectroscopy to the students, scientists, and engineers working in various fields as mentioned above.
Surface-Enhanced Raman Spectroscopy: Principles, Experiments, and Applications is a comprehensive, up to date, and balanced treatment of the theoretical and practical aspects of Surface-Enhanced Raman Scattering (SERS), a useful branch of spectroscopy for several areas of science. This book describes the basic principles of SERS, including SERS mechanisms, performing SERS measurements, and interpreting data. Also emphasized are applications in electrochemistry; catalysis; surface processing and corrosion; Self-Assemble-Layer and L-B Films; polymer science; biology; medicine and drug analysis; sensors; fuel cells; forensics; and archaeology. It is an essential guide for student and professional analytical chemists.
Researchers and engineers working in nuclear laboratories, nuclear electric plants, and elsewhere in the radiochemical industries need a comprehensive handbook describing all possible radiation-chemistry interactions between irradiation and materials, the preparation of materials under distinct radiation types, the possibility of damage of material
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.