Download Free Resistive Switching Oxide Materials Mechanisms Devices And Operations Book in PDF and EPUB Free Download. You can read online Resistive Switching Oxide Materials Mechanisms Devices And Operations and write the review.

This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
This book covers a range of models, circuits and systems built with memristor devices and networks in applications to neural networks. It is divided into three parts: (1) Devices, (2) Models and (3) Applications. The resistive switching property is an important aspect of the memristors, and there are several designs of this discussed in this book, such as in metal oxide/organic semiconductor nonvolatile memories, nanoscale switching and degradation of resistive random access memory and graphene oxide-based memristor. The modelling of the memristors is required to ensure that the devices can be put to use and improve emerging application. In this book, various memristor models are discussed, from a mathematical framework to implementations in SPICE and verilog, that will be useful for the practitioners and researchers to get a grounding on the topic. The applications of the memristor models in various neuromorphic networks are discussed covering various neural network models, implementations in A/D converter and hierarchical temporal memories.
This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.
This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Energy and information are interconnected and are essential elements for the development of human society. Transmission, processing and storage of information requires energy consumption, while the efficient use and access to new energy sources requires new information (ideas and expertise) and the design of novel systems such as photovoltaic devices, fuel cells and batteries. Semiconductor physics creates the knowledge base for the development of information (computers, cell phones, etc.) and energy (photovoltaic) technologies. The exchange of ideas and expertise between these two technologies is critical and expands beyond semiconductors. Continued progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions, new materials are being introduced into electronics manufacturing at an unprecedented rate, and alternative technologies to mainstream CMOS are evolving. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Semiconductor Nanotechnology features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors, quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.
Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are potential candidates for a next-generation replacement for flash memory. In this thesis, bipolar resistive switching is reported for the first time in solution-deposited zinc-tin-oxide (ZTO). The impact of the compliance current on device operation, including the SET and RESET voltages, pre-SET, RESET and post-RESET currents, the resistance ratio between the low and high resistance states, retention, and the endurance, is investigated for an isolated Al dot/ZTO/Ir blanket device and for Al/ZTO/Pt crossbar RRAM devices. A gradual forming process is devised to improve device stability and performance. It is found that the device performance depends critically on the compliance current density that is used to limit the breakdown conduction during the SET operation. In addition, it was found that the conduction and switching mechanisms are consistent with the filament model of formation and rupture of conductive filaments.
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.