Steven Walton Rynders
Published: 1991
Total Pages: 742
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The influences of precursor molecular structure and electronic properties on the molecular structure, stoichiometry, and optical properties of a-SiC:H alloy films prepared through plasma enhanced chemical vapor deposition were investigated using infrared spectroscopy, ultraviolet-visible absorption spectroscopy, and sputtered neutral atom mass spectrometry (SNMS). Members of the homologous series tetramethylsilane (TeMS), trimethylsilane (TrMS), and dimethylsilane (DMS) as well as methane-silane (MS) were characterized as a-SiC:H precursors. Film structure, optical properties, and stoichiometry were studied as a function of precursor structure and deposition conditions, with deposition pressure serving as the manipulated variable. The infrared spectra of films prepared from the alkylsilane precursors revealed a strong dependence of the film structure on the deposition pressure, with high pressures ($>$0.1 torr) producing linear, polymeric films, and low pressures ($