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Annotation This collection of 49 papers identifies the significant advances and distills the current knowledge from the literature which has been published on indium phosphate (InP) in the last ten years. The major areas of discussion are the importance on InP properties in devices; mechanical, thermal, piezoelectric and electro-optic properties; electronic transport properties; band structure; optical properties; defects, deep levels and their detection; and processing technologies. Topics include InP-based alloys as optical amplifiers and lasers, electron and hole mobilities in InP, conduction band and valance band offsets at various InP/semiconductor interfaces, defect energy levels in irradiated or implanted InP, and etching of InP. Some of the material is reprinted from published in 1991. Distributed by INSPEC. Annotation c. Book News, Inc., Portland, OR (booknews.com)
Invaluble to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fiber optic cables.
Invaluable to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fibre optic cables.
The rates of dissolution of indium phosphide in certain acids at various temperatures were determined. Etching agents are proposed for chemical polishing, finding dislocation pits, and also for detecting single-crystal nature of ingots of indium phosphide without using microstructural investigations. During abrasive treatment of indium phosphide using water, it is found that the source of liberation of phosphine is not only the hydrolysis reaction, but also includes processes leading to the reaction of InP with the products of its oxidation at points of local heating. (Author).
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