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Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.
The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.
This volume on the novelties in the electronic properties of solids appears in occasion of Franco Bassani sixtieth birthday, and is dedicated to honour a scientific activity which has contributed so much of the development of this very active area of research. It is re markable that this book can cover so large a part of the current research on electronic properties of solids by contributions from Bassani's former students, collaborators at different stages of his scientific life, and physicists from all over the world who have been in close scientific relationship with him. A personal flavour therefore accompanies a number of the papers of this volume, which are both up-to-date reports on present research and original recollections of the early events of modern solid state physics. The volume begins with a few contributions dealing with theoretical procedures for electronic energy levels, a primary step toward the interpretation of structural and optical properties of extended and confined systems. Other papers concern the interacting state of electrons with light (polaritons) and the effect of the coupling of electrons with lattice vibrations, with emphasis on the thermal behaviour of the electron levels and on such experimental procedures as piezospectroscopy. Electron-lattice interaction in external magnetic field and transport-related properties due to high light excitation are also con sidered. The impact of synchroton radiation on condensed matter spectroscopy is dis cussed in a topical contribution, and optical measurements are presented for extended and impurity levels.
Zinc Oxide (ZnO) powder has been widely used as a white paint pigment and industrial processing chemical for nearly 150 years. However, following a rediscovery of ZnO and its potential applications in the 1950s, science and industry alike began to realize that ZnO had many interesting novel properties that were worthy of further investigation. ZnO is a leading candidate for the next generation of electronics, and its biocompatibility makes it viable for medical devices. This book covers recent advances including crystal growth, processing and doping and also discusses the problems and issues that seem to be impeding the commercialization of devices. Topics include: Energy band structure and spintronics Fundamental optical and electronic properties Electronic contacts of ZnO Growth of ZnO crystals and substrates Ultraviolet photodetectors ZnO quantum wells Zinc Oxide Materials for Electronic and Optoelectronic Device Applications is ideal for university, government, and industrial research and development laboratories, particularly those engaged in ZnO and related materials research.
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.