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This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
This book comprises the contributions to the sixth conference on polycrystalline semiconductors (POLYSE). The conference covered many aspects of polycrystalline semiconductors, but was more applications-oriented than on previous occasions; thereby reflecting the rapid evolution of these technologies. POLYSE 2000 brought together research specialists from basic research, as well as from research & development engineering, all of whom are working on devices such as thin-film transistors, micro-electromechanical systems, or sensors and actuators. In particular, ten internationally recognized scientists (J. Morante, S.Périchon, M. Konagai, S. Wagner, R. Hagenbeck, D.A. Bonnell, G. Horowitz, T.Fuyuki, J. Kocka and V. Chuwere) were invited to review their work on several interesting and promising aspects of the subject: such as, micro-systems, solar cells, thin-film transistors, organic polycrystalline devices and polycrystalline ceramics.
This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.
The subject matter of thin-films – which play a key role in microelectronics – divides naturally into two headings: the processing / structure relationship, and the structure / properties relationship. Part II of 'Materials Science in Microelectronics' focuses on the latter of these relationships, examining the effect of structure on the following: •Electrical properties•Magnetic properties•Optical properties•Mechanical properties•Mass transport properties•Interface and junction properties•Defects and properties - Captures the importance of thin films to microelectronic development - Examines the cause / effect relationship of structure on thin film properties
The possible upgrade of LHC or a future generation of colliders at the extreme limits of energy and luminosity will require detectors based on very advanced technological solutions to fully exploit the physics opportunities offered. Major steps must be taken to design and realize devices that are able not only to handle very high rates but also to cope with the very harsh radiation environment without suffering any performance degradation.This book reviews the present status, current limits and recent developments in detection techniques and related aspects (simulation, signal acquisition, tracking, particle identification, etc.). Novel ideas in this domain are discussed with emphasis on the directions in which improvements in proven techniques are desired.The proceedings have been selected for coverage in: OCo Index to Scientific & Technical Proceedings- (ISTP- / ISI Proceedings)OCo Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)OCo CC Proceedings OCo Engineering & Physical Sciences"
Over the nearly 20 years of Kelvin probe force microscopy, an increasing interest in the technique and its applications has developed. This book gives a concise introduction into the method and describes various experimental techniques. Surface potential studies on semiconductor materials, nanostructures and devices are described, as well as application to molecular and organic materials. The current state of surface potential at the atomic scale is also considered. This book presents an excellent introduction for the newcomer to this field, as much as a valuable resource for the expert.