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Physics, Chemistry and Technology Proceedings of the 4th International Conference on Polycrystalline Semiconductors - Physics, Chemistry and Technology (POLYSE '95), Gargnano, Italy, September, 1995
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
This book comprises the over 100 contributions that were presented at the International Conference on Polycrystalline Semiconductors which took place from September 10 to 13, 2002, in Nara, Japan.
IV-VI and IV-VI2 semiconductors are among the most interesting materials in semiconductor physics. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. These semiconductors either have already found use or are promising materials for infrared sensors and sources, thermoelectric elements, solar cells, memory elements, etc. The basic characteristics of these compounds, namely, narrow bandgap, high permittivity, relatively high radiation resistance, high mobility of charge carriers, and high bond ionicity, are unique among semiconductor substances. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about phase relations in ternary systems based on IV-VI and IV-VI2 semiconductors, providing the first systematic account of phase equilibria in ternary systems and making research originally published in Russia accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid-state physicists. FEATURES Provides up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases
Knowledge of the refractive indices and absorption coefficients of semiconductors is especially important in the design and analysis of optical and photonic devices. This book presents data on the optical constants of various elemental and compound semiconductors. A complete set of the optical constants of the semiconductors are presented in tabular and graphical forms over the entire photon-energy range. They are: the complex dielectric constant e(E)=e1(E)+ie2(E), the complex refractive index n*(E)=n(E)+ik(E), the absorption coefficient a(E), and the normal-incidence reflectivity R(E). The book will aid many who are interested to know the optical constants of the elemental and compound semiconductors in the course of their work.
Knowledge of the refractive indices and absorption coefficients of semiconductors is especially important in the design and analysis of optical and photonic devices. This book presents data on the optical constants of various elemental and compound semiconductors. A complete set of the optical constants of the semiconductors are presented in tabular and graphical forms over the entire photon-energy range. They are: the complex dielectric constant ε(E)=ε1(E)+iε2(E), the complex refractive index n*(E)=n(E)+ik(E), the absorption coefficient α(E), and the normal-incidence reflectivity R(E). The book will aid many who are interested to know the optical constants of the elemental and compound semiconductors in the course of their work.
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.