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Polycrystalline and Amorphous Thin Films and Devices is a compilation of papers that discusses the electronic, optical, and physical properties of thin material layers and films. This compilation reviews the different applications of thin films of various materials used as protective and optical coatings, thermal transfer layers, and selective membranes from submicron- area VLSI memory units to large-area energy conservation devices. Some papers discuss the basic properties, such as growth, structure, electrical, and optical mechanisms that are encountered in amorphous and polycrystalline thin semiconductor films. For example, experiments on electronic structure of dislocations have led to a model for the intrinsic properties of grain boundaries in polycrystalline semiconductor thin films that can have an impact on the designs of high-efficiency, thin-film solar cells. Other papers review the problems encountered in these thin layers in active semiconductor devices and passive technologies. Techniques in film growth and control variables of source, substrate temperature, and substrate properties will determine the successful performance of the devices installed with these thin film layers. This compilation can prove valuable for chemists, materials engineers, industrial technologists, and researchers in thin-film technology.
Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, starting out with the physical properties, but concentrating on device applications. A special emphasis is given to amorphous silicon and microcrystalline silicon as photovoltaic materials, along with a model that allows these systems to be physically described in the simplest manner possible, thus allowing the student or scientist/engineer entering the field of thin-film electronics to master a few basic concepts that are distinct from those in the field of conventional semiconductors. The main part of the book deals with solar cells and modules by illustrating the basic functioning of these devices, along with their limitations, design optimization, testing and fabrication methods. Among the manufacturing processes discussed are plasma-assisted and hot-wire deposition, sputtering, and structuring techniques.
This is the sixth volume in the series "Mathematics in Industrial Prob lems. " The motivation for these volumes is to foster interaction between Industry and Mathematics at the "grass roots level"; that is, at the level of specific problems. These problems come from Industry: they arise from models developed by the industrial scientists in ventures directed at the manufacture of new or improved products. At the same time, these prob lems have the potential for mathematical challenge and novelty. To identify such problems, I have visited industries and had discussions with their scientists. Some of the scientists have subsequently presented their problems in the IMA Seminar on Industrial Problems. The book is based on the seminar presentations and on questions raised in subse quent discussions. Each chapter is devoted to one of the talks and is self contained. The chapters usually provide references to the mathematical literature and a list of open problems which are of interest to the industrial scientists. For some problems a partial solution is indicated briefly. The last chapter of the book contains a short description of solutions to some of the problems raised in previous volumes, as well as references to papers in which such solutions have been published. The speakers in the seminar on Industrial Problems have given us at the IMA hours of delight and discovery. My thanks to Thomas Hoffend (3M), John Spence (Eastman Kodak Company), Marius Orlowski (Mo torola, Inc. ), Robert J.
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.
Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver sion, and protection and passivating layers. Indeed, one would be hard pressed to find many sophisticated modern optical and electronic devices which do not use thin films in one way or the other. With the impetus provided by industrial applications, the science and technology of thin films have undergone revolutionary development and even today continue to be recognized globally as frontier areas of RID work. Major technical developments in any field of science and technology are invariably accompanied by an explosion of published literature in the form of scientific publications, reviews, and books.
Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.