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Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma. Next, the selection details wave instabilities in plasma and drift instabilities. The text also discusses hot electrons, along with the instabilities due to inter-valley electron transfer. The next chapters talks about avalanche and recombination instabilities. The last chapter deals with plasma streams. The book will be of great use to student and professional electronics engineers and technicians.
Introduction to Plasma Physics is the standard text for an introductory lecture course on plasma physics. The text's six sections lead readers systematically and comprehensively through the fundamentals of modern plasma physics. Sections on single-particle motion, plasmas as fluids, and collisional processes in plasmas lay the groundwork for a thorough understanding of the subject. The authors take care to place the material in its historical context for a rich understanding of the ideas presented. They also emphasize the importance of medical imaging in radiotherapy, providing a logical link to more advanced works in the area. The text includes problems, tables, and illustrations as well as a thorough index and a complete list of references.
Cyclotron Waves in Plasma is a four-chapter text that covers the basic physical concepts of the theory of cyclotron waves and cyclotron instabilities, brought about by the existence of steady or alternating plasma currents flowing perpendicular to the magnetic field. This book considers first a wide range of questions associated with the linear theory of cyclotron oscillations in equilibrium plasmas and in electron plasmas in metals and semiconductors. The next chapter deals with the parametric excitation of electron cyclotron oscillations in plasma in an alternating electric field. A chapter focuses on plasma turbulence, which results from the development of cyclotron instabilities. The last chapter discusses pertinent experimental data concerning cyclotron waves in plasma. The book is intended for specialists in plasma physics and a number of related fields, including the physics of the ionosphere, solar wind and, metals, as well as for students and teachers who are specializing in these subjects.
The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.
This volume contains the proceedings of a NATO Advanced study Institute held at Geilo, Norway between 2 - 12 april 1991. This institute was the eleventh in a series held biannually at Geilo on the subject of phase transitions. It was intended to capture the latest ideas on selforgan ized patterns and criticality. The Institute brought together many lecturers, students and active re searchers in the field from a wide range of NATO and non-NATO countries. The main financial support came from the NATO scientific Affairs Divi sion, but additional support was obtained from the Norwegian Research Council for Science and the Humanities (NAVF) and Institutt for energi teknikk. The organizers would like to thank all these contributors for their help in promoting an exciting and rewarding meeting, and in doing so are confident that they echo the appreciation of all the parti cipants. In cooperative, equilibrium systems, physical states are described by spatio-temporal correlation functions. The intimate connection between space and time correlations is especially apparent at the critical point, the second order phase transition, where the spatial range and the decay time of the correlation function both become infinite. The salient features of critical phenomena and the history of the devel opment of this field of science are treated in the first chapter of this book.
The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.
This book brings together concepts from semiconductor physics, nonlinear-dynamics and chaos to examine semiconductor transport phenomena.
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.