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Physics and Applications of Secondary Electron Emission provides a survey of the physics and applications of secondary electron emission. It is part of a series of monographs that aim to report on research carried out in electronics and applied physics. The monographs are written by specialists in their own subjects. Wherever it is practical the monographs will be kept short in length to enable all those interested in electronics to find the essentials necessary for their work in a condensed and concentrated form. The book begins with a discussion of secondary electrons. Separate chapters cover methods for measuring secondary electron emission; numerical results on the secondary electron emission yield of both metals and metal compounds; the influence of externally adsorbed foreign atoms and ions on secondary electron emission; and the mechanism of secondary electron emission. The final three chapters deal with the application side. These include the applications of electron multiplication; the elimination of disturbing effects due to secondary electrons; and ""storage"" devices in which information on electrical charges is written on an insulating surface, often by making use of secondary electron emission.
A practical, in-depth description of the physics behind electron emission physics and its usage in science and technology Electron emission is both a fundamental phenomenon and an enabling component that lies at the very heart of modern science and technology. Written by a recognized authority in the field, with expertise in both electron emission physics and electron beam physics, An Introduction to Electron Emission provides an in-depth look at the physics behind thermal, field, photo, and secondary electron emission mechanisms, how that physics affects the beams that result through space charge and emittance growth, and explores the physics behind their utilization in an array of applications. The book addresses mathematical and numerical methods underlying electron emission, describing where the equations originated, how they are related, and how they may be correctly used to model actual sources for devices using electron beams. Writing for the beam physics and solid state communities, the author explores applications of electron emission methodology to solid state, statistical, and quantum mechanical ideas and concepts related to simulations of electron beams to condensed matter, solid state and fabrication communities. Provides an extensive description of the physics behind four electron emission mechanisms—field, photo, and secondary, and how that physics relates to factors such as space charge and emittance that affect electron beams. Introduces readers to mathematical and numerical methods, their origins, and how they may be correctly used to model actual sources for devices using electron beams Demonstrates applications of electron methodology as well as quantum mechanical concepts related to simulations of electron beams to solid state design and manufacture Designed to function as both a graduate-level text and a reference for research professionals Introduction to the Physics of Electron Emission is a valuable learning tool for postgraduates studying quantum mechanics, statistical mechanics, solid state physics, electron transport, and beam physics. It is also an indispensable resource for academic researchers and professionals who use electron sources, model electron emission, develop cathode technologies, or utilize electron beams.
Solid State Physics
This book fills the gap for a textbook describing this kind of electron beam source in a systematic and thorough manner: from physical processes of electron emission to examples of real plasma electron sources and their applications.
The correlation between the microscopic composition of solids and their macroscopic (electrical, optical, thermal) properties is the goal of solid state physics. This book is the deeply revised version of the French book Initiationa physique du solide: exercices commentes avec rappels de cours, written more than 20 years ago. It has five sections
In the spring of 1963, a well-known research institute made a market survey to assess how many scanning electron microscopes might be sold in the United States. They predicted that three to five might be sold in the first year a commercial SEM was available, and that ten instruments would saturate the marketplace. In 1964, the Cambridge Instruments Stereoscan was introduced into the United States and, in the following decade, over 1200 scanning electron microscopes were sold in the U. S. alone, representing an investment conservatively estimated at $50,000- $100,000 each. Why were the market surveyers wrongil Perhaps because they asked the wrong persons, such as electron microscopists who were using the highly developed transmission electron microscopes of the day, with resolutions from 5-10 A. These scientists could see little application for a microscope that was useful for looking at surfaces with a resolution of only (then) about 200 A. Since that time, many scientists have learned to appreciate that information content in an image may be of more importance than resolution per se. The SEM, with its large depth of field and easily that often require little or no sample prepara interpreted images of samples tion for viewing, is capable of providing significant information about rough samples at magnifications ranging from 50 X to 100,000 X. This range overlaps considerably with the light microscope at the low end, and with the electron microscope at the high end.
This new edition describes all the mechanisms of elastic and inelastic scattering of electrons with the atoms of the target as simple as possible. The use of techniques of quantum mechanics is described in detail for the investigation of interaction processes of electrons with matter. It presents the strategies of the Monte Carlo method, as well as numerous comparisons among the results of the simulations and the experimental data available in the literature. New in this edition is the description of the Mermin theory, a comparison between Mermin theory and Drude theory, a discussion about the dispersion laws, and details about the calculation of the phase shifts that are used in the relativistic partial wave expansion method. The role of secondary electrons in proton cancer therapy is discussed in the chapter devoted to applications. In this context, Monte Carlo results about the radial distribution of the energy deposited in PMMA by secondary electrons generated by energetic proton beams are presented.
Scanning Electron Microscopy provides a description of the physics of electron-probe formation and of electron-specimen interactions. The different imaging and analytical modes using secondary and backscattered electrons, electron-beam-induced currents, X-ray and Auger electrons, electron channelling effects, and cathodoluminescence are discussed to evaluate specific contrasts and to obtain quantitative information.
High Power Impulse Magnetron Sputtering: Fundamentals, Technologies, Challenges and Applications is an in-depth introduction to HiPIMS that emphasizes how this novel sputtering technique differs from conventional magnetron processes in terms of both discharge physics and the resulting thin film characteristics. Ionization of sputtered atoms is discussed in detail for various target materials. In addition, the role of self-sputtering, secondary electron emission and the importance of controlling the process gas dynamics, both inert and reactive gases, are examined in detail with an aim to generate stable HiPIMS processes. Lastly, the book also looks at how to characterize the HiPIMS discharge, including essential diagnostic equipment. Experimental results and simulations based on industrially relevant material systems are used to illustrate mechanisms controlling nucleation kinetics, column formation and microstructure evolution.