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A thorough review of the properties of deep-level, localized defects in semiconductors.
This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related mate
A review summarising the current state of research in the field, bridging the gaps in the existing literature. All the chapters are written by world leaders in research and development and guide readers through the details of photo-induced metastability and the results of the latest experiments and simulations not found in standard monographs on this topic. A useful reference not only for graduates but also for scientific and industrial researchers. With a foreword of Kazunobu Tanaka
Message from The Taniguchi Foundation Dr. Kanamori, Distinguished Guests and Friends: The Taniguchi Foundation wishes to welcome the participants of the nine teenth International Symposium on the Theory of Condensed Matter, who have come from within this country and from different parts of the world. The concept of the symposium is unique in that participants, both Japanese and from abroad, are limited in number to small discussion groups, and live together, although for a short period, as a close-knit community. We feel that this kind of environment will assist towards the strengthening of understanding and the fostering of friendship among the attendees. It is easy to talk about, but difficult to realize, the ideal of international friendship and understanding in a world which is steadily growing smaller. So far, the Foundation has invited a total of 149 participants in this division from 24 foreign countries and 299 participants from Japan. And we are all friends. We hope and trust that even after they have reached the heights of academic fame during the coming decades, the participants will continue to join forces and help to forge closer bonds of friendship and cooperation that will make major contributions not only to academia, but also towards world peace and the welfare of mankind. We hope that all the participants will return home with warm memories of both this symposium and the pleasant times that we have shared. Thank you.
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.