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An approach for hardening metal oxide semiconductor (MOS) transistors to ionizing radiation by reducing the thickness of the gate oxide is presented. It is shown that Si gate, n-channel MOS field-effect transistors with oxides 200 A thick continue to operate in the enhancement mode after irradiation to 1,000,000 rads (Si) with a positive bias applied to the gate during the irradiation. This represents a considerable improvement over conventional thick-oxide (approximately 1000-A) devices, which go into the depletion mode of operation at 100,000 rads (Si). The thin-oxide devices after exposure to pulsed ionizing radiation showed improved performance over that of thick-oxide devices. It was found also that device operation following irradiation depended on the source-drain spacing (Channel length): Shortening the channel length leads to an increased shift of the threshold voltage induced by irradiation. (Author).
Radiation effects on Metal-Oxide-Silicon Field Effect Transistors are studied. A brief history of development, theory of operation and survey of previous radiation effect work is given. Previous work points to a charge buildup in the oxide layer and a possible increase in fast surface state density as being the causes of semi-permanent degradation. Experimental work was done using a FI 100 p-channel MOSFET to determine the feasibility of studying radiation effects using available equipment at the Naval Postgraduate School. It was found that the study of charge buildup is feasible. Data obtained agreed qualitatively with previous results. Thermal annealing of a device after irradiation reduced the semi-permanent degradation significantly as is seen in previous work. Transient photocurrents produced in the oxide layer were examined and problems were revealed which must be solved before such work will become meaningful. Package and charge scattering effects may be masking the real effects. Suggestions for future work are included. (Author).
This program includes studies of active device intrinsic response and has as its broad objective the study of this intrinsic response for the majority carrier thin-film transistor. For this study fundamental solid state behavior is described in terms of active device circuit parameters and leads ultimately to radiation hard circuit design by manipulation of device design parameters.