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The Fourth USA-USSR Symposium. on The Physics of Optical Phenomena and Their Use as Probes of Matter, was held in Irvine, California, January 23-27, 1990. Participating in the Symposium were 22 scientists from the USSR and 29 from the USA. In addition, to provide an international dimension to this Symposium without, however, compromising significantly its essentially binational character, 7 non-US and non-USSR scientists were invited to take part in it. The present volume is the proceedings of that Symposium, and contains all manuscripts received prior to August 1, 1990, representing. scientific contributions presented. A few manuscripts were not received, but for completeness the corresponding abstract is printed.. Three previous USA/USSR Binational Symposia on related topics have been held, viz. "Theory of Light Scattering in Condensed Matter" (Moscow, 1975), "Light Scattering in Solids" (New York, 1979), and "Laser Optics of Condensed Matter" (Leningrad, 1987). These meetings were evaluated by the participants as highly successful and provided invaluable oppor tunities for researchers to exchange information and to initiate colla borative work which led to research visits by US physicist to Soviet laboratories, and vice versa, and which continue to the present day.
This thesis investigates the dynamics of passively mode-locked semiconductor lasers, with a focus on the influence of optical feedback on the noise characteristics. The results presented here are important for improving the performance of passively mode-locked semiconductor lasers and, at the same time, are relevant for understanding delay-systems in general. The semi-analytic results developed are applicable to a broad range of oscillatory systems with time-delayed feedback, making the thesis of relevance to various scientific communities. Passively mode-locked lasers can produce pulse trains and have applications in the contexts of optical clocking, microscopy and optical data communication, among others. Using a system of delay differential equations to model these devices, a combination of numerical and semi-analytic methods is developed and used to characterize this system.
In this dissertation, self-assembled InAs/InGaAs quantum dot Fabry-Pérot lasers and mode-locked lasers are investigated. The mode-locked lasers investigated include monolithic and curved two-section devices, and colliding pulse mode-locked diode lasers. Ridge waveguide semiconductor lasers have been designed and fabricated by wet etching processes. Electroluminescence of the quantum dot lasers is studied. Cavity length dependent lasing via ground state and/or excited state transitions is observed from quantum dot lasers and the optical gain from both transitions is measured. Stable optical pulse trains via ground and excited state transitions are generated using a grating coupled external cavity with a curved two-section device. Large differences in the applied reverse bias voltage on the saturable absorber are observed for stable mode-locking from the excited and ground state mode-locking regimes. The optical pulses from quantum dot mode-locked lasers are investigated in terms of chirp sign and linear chirp magnitude. Upchirped pulses with large linear chirp magnitude are observed from both ground and excited states. Externally compressed pulse widths from the ground and excited states are 1.2 ps and 970 fs, respectively. Ground state optical pulses from monolithic mode-locked lasers e.g., two-section devices and colliding pulse mode-locked lasers, are also studied. Transformed limited optical pulses (~4.5 ps) are generated from a colliding pulse mode-locked semiconductor laser. The above threshold linewidth enhancement factor of quantum dot Fabry-Pérot lasers is measured using the continuous wave injection locking method. A strong spectral dependence of the linewidth enhancement factor is observed around the gain peak. The measured linewidth enhancement factor is highest at the gain peak, but becomes lower 10 nm away from the gain peak. The lowest linewidth enhancement factor is observed on the anti-Stokes side. The spectral dependence of the pulse duration from quantum dot based mode-locked lasers is also observed. Shorter pulses and reduced linear chirp are observed on the anti-Stokes side and externally compressed 660 fs pulses are achieved in this spectral regime. A novel clock recovery technique using passively mode-locked quantum dot lasers is investigated. The clock signal (~4 GHz) is recovered by injecting an interband optical pulse train to the saturable absorber section. The excited state clock signal is recovered through the ground state transition and vice-versa. Asymmetry in the locking bandwidth is observed. The measured locking bandwidth is 10 times wider when the excited state clock signal is recovered from the ground state injection, as compared to recovering a ground state clock signal from excited state injection.
Mode locking of semiconductor laser with external cavity has been observed by optoelectronic feedback. The noticeable narrowing of the microwave spectrum explains the mode locking phenomenon which occurs when the optoelectronic feedback is sufficiently strong. A second order harmonic relating method or a strip camera can be used to measure the pulse width in order to positively identify the locking condition. After testing several semiconductor lasers, the results show that most of these possess a relatively string induced self-pulsing at 1 GHz. A better result can be achieved if a 1 GHz amplifier is used and its magnifying power is increased. The experiment shows that an induced self-pulsing can be obtained from the LD, which originally has no self-pulsing, after an external cavity reaches the passive locking mode, an active-passive self-adjusting locking mode, which occurs owing to the automatic matching between the adjusting frequency and cavity length, can be achieved after the optoelectronic feedback. Chinese translations. (jhd).
This invaluable book provides a comprehensive treatment of the design and application of Mode Locked Lasers and Short Pulse Generation. With the advances in semiconductor laser and fiber laser technologies in the 1980s to now, these devices have been made compact, refined, and developed for a wide range of applications including further scientific studies.Semiconductor mode-locked lasers are stable pulse sources and can be made over a range of wavelengths where laser operation is feasible. Rare earth doped fiber lasers or planar waveguides extend this range further and can provide compact pulsed sources. The principles of operation, analysis, design and fabrication of these sources are described. Recent results on high repetition rate and high-power pulse generation from these compacts sources are also described, together with current and future directions of application of these types of laser sources.Mode-Locked Lasers: Introduction to Ultrafast Semiconductor and Fiber Lasers is self-contained and unified in presentation. It can be used as an advanced text by graduate students and by practicing engineers. It is also suitable for non-experts who wish to have an overview of mode-locked lasers and pulse generation. The explanations in the book are detailed enough to capture the interest of the curious reader and complete enough to provide the necessary background to explore the subject further.
This timely book combines theory, applications, and projections on ultrafast diode lasers (UDL). A comprehensive treatment of UDLs from basic physical principles to applications in optical fiber communications and ultrafast electronics.
An introduction to the fundamentals of lasers and pulsed optics, teaching readers the physics behind short and ultrashort laser pulses, and how to manipulate and measure them. Additionally, the text presents experiments and discusses the spectroscopic implications. This well-rounded book provides an up-to-date insight into one of the most exciting fields of laser physics.