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This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.