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As we approach the end of the present century, the elementary particles of light (photons) are seen to be competing increasingly with the elementary particles of charge (electrons/holes) in the task of transmitting and processing the insatiable amounts of infonnation needed by society. The massive enhancements in electronic signal processing that have taken place since the discovery of the transistor, elegantly demonstrate how we have learned to make use of the strong interactions that exist between assemblages of electrons and holes, disposed in suitably designed geometries, and replicated on an increasingly fine scale. On the other hand, photons interact extremely weakly amongst themselves and all-photonic active circuit elements, where photons control photons, are presently very difficult to realise, particularly in small volumes. Fortunately rapid developments in the design and understanding of semiconductor injection lasers coupled with newly recognized quantum phenomena, that arise when device dimensions become comparable with electronic wavelengths, have clearly demonstrated how efficient and fast the interaction between electrons and photons can be. This latter situation has therefore provided a strong incentive to devise and study monolithic integrated circuits which involve both electrons and photons in their operation. As chapter I notes, it is barely fifteen years ago since the first demonstration of simple optoelectronic integrated circuits were realised using m-V compound semiconductors; these combined either a laser/driver or photodetector/preamplifier combination.
Integrated optoelectronics is becoming ever more important to communications, computer, and consumer industries, with applications in a variety of areas, from consumer electronics to high performance information networks. The requiremets for producing low-cost, highly reliable components for deployment in these new systems have created a technology challenge. Integrated optoelectronics promises to meet the performance and cost objectives of these applications by integrating both optical and electronic components in a highly functional chip. This book provides and overview of this technology.
MICROELECTRONIC INTERCONNECTIONS AND MICROASSEMBL Y WORKSHOP 18-21 May 1996, Prague, Czech Republic Conference Organizers: George Harman, NIST (USA) and Pavel Mach (Czech Republic) Summary of the Technical Program Thirty two presentations were given in eight technical sessions at the Workshop. A list of these sessions and their chairpersons is attached below. The Workshop was devoted to the technical aspects of advanced interconnections and microassembly, but also included papers on the education issues required to prepare students to work in these areas. In addition to new technical developments, several papers presented overviews predicting the future directions of these technologies. The basic issue is that electronic systems will continue to be miniaturized and at the same time performance must continue to improve. Various industry roadmaps were discussed as well as new smaller packaging and interconnection concepts. The newest chip packages are often based on the selection of an appropriate interconnection method. An example is the chip-scale package, which has horizontal (x-y) dimensions,;; 20% larger than the actual silicon chip itself. The chip is often flip-chip connected to a micro ball-grid-array, but direct chip attach was described also. Several papers described advances in the manufacture of such packages.
Optoelectronics ranks one of the highest increasing rates among the different industrial branches. This activity is closely related to devices which are themselves extremely dependent on materials. Indeed, the history of optoelectronic devices has been following closely that of the materials. KLUWER Academic Publishers has thus rightly identified "Materials for Optoelectronics" as a good opportunity for a book in the series entitled "Electronic Materials; Science and Technology". Although a sound background in solid state physics is recommended, the authors have confined their contribution to a graduate student level, and tried to define any concept they use, to render the book as a whole as self-consistent as possible. In the first section the basic aspects are developed. Here, three chapters consider semiconductor materials for optoelectronics under various aspects. Prof. G. E. Stillman begins with an introduction to the field from the point of view of the optoelectronic market. Then he describes how III-V materials, especially the Multi Quantum Structures meet the requirements of optoelectronic functions, including the support of microelectronics for optoelectronic integrated circuits. In chapter 2, Prof.
Starting from the basics of semiconductor lasers with emphasis on the generation of high optical output power the reader is introduced in a tutorial way to all key technologies required to fabricate high-power diode-laser sources. Various applications are exemplified.
While there are books treating individual topics contained in this book, this will be the first single volume providing a cohesive treatment on this subject as a whole. This goes beyond optical communications in that it includes related topics such as sensing, displays, computing, and data storage.
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