Download Free Opto Electrical Properties Of Indium Gallium Arsenic Phosphide Quaternary Epilayers And Multiple Quantum Wells Lattice Matched To Indium Phosphide Book in PDF and EPUB Free Download. You can read online Opto Electrical Properties Of Indium Gallium Arsenic Phosphide Quaternary Epilayers And Multiple Quantum Wells Lattice Matched To Indium Phosphide and write the review.

$In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}$ epilayers lattice matched to InP and $In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}/InP$ Multiple Quantum Wells (MQWs) grown by Chemical-Beam Epitaxy (CBE) are being studied systematically using the Photovoltaic (PV) effect. At first, the Schottky barriers on the interfaces (metal-semiconductor, metal-insulator-semiconductor) are determined as an important factor for the electrical and optical properties of the samples. Samples with identical Schottky contact deposition but with an insulating layer on the front surface, have shown much smaller leakage current and yield enhanced barrier heights. The photovoltaic signal in the temperature interval 4-300K has maximum amplitude at about 150-180K for the MQW samples and at about 190K for the epilayer. An applied electric field changes the integrated intensity and spectrally shifts the allowed and forbidden transitions observed in bias dependent PV spectra of various InGaAsP/InP MQWs. The combined effect of two external factors, the thermal ionization and the electric field on the shape and magnitude of the 11H exciton peak, are discussed in terms of exciton binding energy and field ionization. The optically induced changes and energy shifting of the 11H/ exciton peak are observed, when excitation dependent double beam experiments are conducted on the $In\sb{0.72}Ga\sb{0.28}As\sb{0.68}P\sb{0.32}/InP$ MQWs. The photomodulation of the internal fields through carrier transport results in observing effective nonlinearities at milliwatt power levels. The experimentally measured transition energies for the MQWs show good agreement with the envelope wave function calculations. The observed Schottky barrier heights and band gap energies are consistent with the interpolation scheme estimations. (Abstract shortened by UMI.).
In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.
Invaluble to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fiber optic cables.
Invaluable to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fibre optic cables.
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure