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As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveying the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories
This report is based on a conference on the applications of microcomputers in development sponsored by the U.S. Agency for International Development and the U.S. National Academy of Sciences in collaboration with a host country.
Abstract: "For decades, the memory hierarchy access gap has plagued computer architects with the RAM/disk gap widening to about 6 orders of magnitude in 1999. However, an exciting new storage technology based on MicroElectroMechanical Systems (MEMS) is poised to fill a large portion of this performance gap, delivering significant performance improvements and enabling many new types of applications. This research explores the impact MEMS-based storage will have on computer systems. Working closely with researchers building MEMS-based storage devices, we examine the performance impact of several design points. Results from five different applications show that MEMS-based storage can reduce application I/O stall times by 80-99%, with overall performance improvements ranging from 1.1x to 20x for these applications. Most of these improvements result from the fact that average access times for MEMS-based storage are 5 times faster than disks (e.g., 1-3ms). Others result from fundamental differences in the physical behavior of MEMS-based storage. Combined, these characteristics create numerous opportunities for restructuring the storage/memory hierarchy."