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Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.
This book provides introductory, comprehensive, and concise descriptions of amorphous chalcogenide semiconductors and related materials. It includes comparative portraits of the chalcogenide and related materials including amorphous hydrogenated Si, oxide and halide glasses, and organic polymers. It also describes effects of non-equilibrium disorder, in comparison with those in crystalline semiconductors.
A review summarising the current state of research in the field, bridging the gaps in the existing literature. All the chapters are written by world leaders in research and development and guide readers through the details of photo-induced metastability and the results of the latest experiments and simulations not found in standard monographs on this topic. A useful reference not only for graduates but also for scientific and industrial researchers. With a foreword of Kazunobu Tanaka
Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions
This book highlights the achievements of the self-taught inventor, scientist, manufacturer and entrepreneur, Stanford R Ovshinsky. This remarkable individual could, without special training, compete with the well-funded establishments of learning and industry in the second half of the last century and leave us an incredible legacy of brilliant innovations with a lasting impact on our lives. His achievements extend over amazingly diverse fields and have or are prone to create new industries of great societal value.The phase change memories of commonly used rewritable CDs and DVDs as well as of new flash memories are his invention; so are the Ni Metal hydride batteries which are the enabling batteries for electric and hybrid/electric vehicles. The future hydrogen economy will utilize his efficient and safe hydrogen storage alloys. He has developed light and ultralight photovoltaic solar panels for converting sunlight into electricity and built the largest manufacturing facility for thin film flexible solar roofing materials. A common theme of his inventions is the synthesis of new materials utilizing novel aspects of structural and compositional disorder.The book explains for each of Ovshinsky''s innovations the essence of his pioneering ideas and inventions. These introductions are followed by a selection of Ovshinsky''s seminal publications and, for each subject category, a list of his patents which reveal the inventive mind of this unusually creative person. Ovshinsky''s example of gaining a deep understanding of the science underlying his inventions, his perseverance as well as his ability to attract and inspire talented collaborators will be a role model for entrepreneurs of this century.
Provides a semi-quantitative approach to recent developments in the study of optical properties of condensed matter systems Featuring contributions by noted experts in the field of electronic and optoelectronic materials and photonics, this book looks at the optical properties of materials as well as their physical processes and various classes. Taking a semi-quantitative approach to the subject, it presents a summary of the basic concepts, reviews recent developments in the study of optical properties of materials and offers many examples and applications. Optical Properties of Materials and Their Applications, 2nd Edition starts by identifying the processes that should be described in detail and follows with the relevant classes of materials. In addition to featuring four new chapters on optoelectronic properties of organic semiconductors, recent advances in electroluminescence, perovskites, and ellipsometry, the book covers: optical properties of disordered condensed matter and glasses; concept of excitons; photoluminescence, photoinduced changes, and electroluminescence in noncrystalline semiconductors; and photoinduced bond breaking and volume change in chalcogenide glasses. Also included are chapters on: nonlinear optical properties of photonic glasses; kinetics of the persistent photoconductivity in crystalline III-V semiconductors; and transparent white OLEDs. In addition, readers will learn about excitonic processes in quantum wells; optoelectronic properties and applications of quantum dots; and more. Covers all of the fundamentals and applications of optical properties of materials Includes theory, experimental techniques, and current and developing applications Includes four new chapters on optoelectronic properties of organic semiconductors, recent advances in electroluminescence, perovskites, and ellipsometry Appropriate for materials scientists, chemists, physicists and electrical engineers involved in development of electronic materials Written by internationally respected professionals working in physics and electrical engineering departments and government laboratories Optical Properties of Materials and Their Applications, 2nd Edition is an ideal book for senior undergraduate and postgraduate students, and teaching and research professionals in the fields of physics, chemistry, chemical engineering, materials science, and materials engineering.
The Kyoto Summer Institute 1980 (KSI '80), devoted to "Fundamental Physics of Amorphous Semiconductors", was held at Research Institute for Fundamental Physics (RIFP), Kyoto University, from 8-11 September, 1980. The KSI '80 was the successor of the preceding Institutes which were held in July 1978 on "Particle Physics and Accelerator Projects" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 was attended by 200 participants, of which 36 were from abroad: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 was organized by RIFP and directed by the Amorphous Semicon ductor group in Japan. A few years ago, we started to organize an interna tional meeting on amorphous semiconductors' as a satell ite meeting of the International Conference on "Physics of Semiconductors" held on September 1-5, 1980 in Kyoto. We later decided to hold the meeting in the form of the Kyoto Summer Institute. The Kyoto Summer Institute is aimed to be something between a school and a conference. Accordingly, the object of the KSI '80 was to provide a series of invited lectures and informal seminars on fundamental physics of amorphous semiconductors. No contributed paper was accepted, but seminars were open.
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.