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The papers included in this issue of ECS Transactions were originally presented in the symposium ¿One-Dimensional Nanoscale Electronic and Photonic Devices 2¿, held during the PRiME 2008 joint international meeting of The Electrochemical Society and The Electrochemical Society of Japan, with the technical cosponsorship of the Japan Society of Applied Physics, the Korean Electrochemical Society, the Electrochemistry Division of the Royal Australian Chemical Institute, and the Chinese Society of Electrochemistry. This meeting was held in Honolulu, Hawaii, from October 12 to 17, 2008.
The NODEPD symposium addressed the most recent developments in nanoscale electronic and photonic devices, encompassing one dimensional novel devices, processing, device fabrication, reliability, and other related topics.
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿One-Dimensional Nanoscale Electronic and Photonic Devices 3¿, held during the 216th meeting of The Electrochemical Society, in Vienna, Austria from October 4 to 9, 2009.
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Low-Dimensional Nanoscale Electronic and Photonic Devices 4¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.
Composites are used in a wide range of applications, from electronics to the aeronautical industry. The excellent mechanical properties and low-specific weight of composites are the basis of many structural applications. Despite the progress achieved, there are significant obstacles to the generalisation of structural applications of composites, mainly due to their high cost and complex mechanical behaviour. In fact, there is currently insufficient knowledge regarding the mechanical properties and failure mechanisms of composites made from renewable and sustainable materials. This book focuses on composites from natural and renewable resources, including the enhancement of their properties with additives such as biodegradable nanomaterials, their mechanical characterisation, tailoring of properties for specific applications and their processing.
Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. - Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing - Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more - Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact
One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.