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A practical, tutorial guide to the nonlinear methods and techniques needed to design real-world microwave circuits.
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
This is the definitive guide to X-parameters, written by the original inventors and developers of this powerful new paradigm for nonlinear RF and microwave components and systems. Learn how to use X-parameters to overcome intricate problems in nonlinear RF and microwave engineering. The general theory behind X-parameters is carefully and intuitively introduced, and then simplified down to specific, practical cases, providing you with useful approximations that will greatly reduce the complexity of measuring, modeling and designing for nonlinear regimes of operation. Containing real-world case studies, definitions of standard symbols and notation, detailed derivations within the appendices, and exercises with solutions, this is the definitive stand-alone reference for researchers, engineers, scientists and students looking to remain on the cutting-edge of RF and microwave engineering.
Discover the nonlinear methods and tools needed to design real-world microwave circuits with this tutorial guide. Balancing theoretical background with practical tools and applications, it covers everything from the basic properties of nonlinear systems such as gain compression, intermodulation and harmonic distortion, to nonlinear circuit analysis and simulation algorithms, and state-of-the-art equivalent circuit and behavioral modeling techniques. Model formulations discussed in detail include time-domain transistor compact models and frequency-domain linear and nonlinear scattering models. Learn how to apply these tools to designing real circuits with the help of a power amplifier design example, which covers all stages from active device model extraction and the selection of bias and terminations, through to performance verification. Realistic examples, illustrative insights and clearly conveyed mathematical formalism make this an essential learning aid for both professionals working in microwave and RF engineering and graduate students looking for a hands-on guide to microwave circuit design.
This book focuses on broadband power amplifier design for wireless communication. Nonlinear model embedding is described as a powerful tool for designing broadband continuous Class-J and continuous class F power amplifiers. The authors also discuss various techniques for extending bandwidth of load modulation based power amplifiers, such as Doherty power amplifier and Chireix outphasing amplifiers. The book also covers recent trends on digital as well as analog techniques to enhance bandwidth and linearity in wireless transmitters. Presents latest trends in designing broadband power amplifiers; Covers latest techniques for using nonlinear model embedding in designing power amplifiers based on waveform engineering; Describes the latest techniques for extending bandwidth of load modulation based power amplifiers such as Doherty power amplifier and Chireix outphasing amplifiers; Includes coverage of hybrid analog/digital predistortion as wideband solution for wireless transmitters; Discusses recent trends on on-chip power amplifier design with GaN /GaAs MMICs for high frequency applications.
This comprehensive, hands-on review of the most up-to-date techniques in RF and microwave measurement combines microwave circuit theory and metrology, in-depth analysis of advanced modern instrumentation, methods and systems, and practical advice for professional RF and microwave engineers and researchers. Topics covered include microwave instrumentation, such as network analyzers, real-time spectrum analyzers and microwave synthesizers; linear measurements, such as VNA calibrations, noise figure measurements, time domain reflectometry and multiport measurements; and non-linear measurements, such as load- and source-pull techniques, broadband signal measurements, and non-linear NVAs. Each technique is discussed in detail and accompanied by state-of-the-art solutions to the unique technical challenges associated with its use. With each chapter written by internationally recognised experts in the field, this is an invaluable resource for researchers and professionals involved with microwave measurements.
This book is a summary of a series of achievements made by the authors and colleagues in the areas of radio frequency power amplifier modeling (including neural Volterra series modeling, neural network modeling, X-parameter modeling), nonlinear analysis methods, and power amplifier predistortion technology over the past 10 years. The book is organized into ten chapters, which respectively describe an overview of research of power amplifier behavioral models and predistortion technology, nonlinear characteristics of power amplifiers, power amplifier behavioral models and the basis of nonlinear analysis, an overview of power amplifier predistortion, Volterra series modeling of power amplifiers, power amplifier modeling based on neural networks, power amplifier modeling with X-parameters, the modeling of other power amplifiers, nonlinear circuit analysis methods, and predistortion algorithms and applications. Blending theory with analysis, this book will provide researchers and RF/microwave engineering students with a valuable resource.
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

The complexity requirements of future wireless communication systems now indeed demand a more general theoretically robust design methodology for nonlinear circuits, such as the power amplifiers. The present design methodology for nonlinear Radio Frequency components and circuits has become a key hindrance in the evaluation, development and testing of modern communication systems. The fundamental nature of this engineering challenge makes it highly unlikely to be addressed within the competitive Radio Frequency industry with short-term profitability, time to market and risk aversion considerations.

The book , therefore, includes developing advanced waveform measurement setups, multi-tone measurement techniques, characterization and modelling of nonlinear distortion in microwave power transistors and design of high-power and spectrum-efficient RF power amplifiers for future wireless communication systems. Further enlists the key impediments in Power Amplifier design through the application of waveform engineering to embrace simultaneously efficiency and linearity objectives of power amplifier design as well as investigate the most robust and appropriate behavioral model formulation that includes memory effects.

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.