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When films growth under nonequilibrium conditions, phenomena not predicted from microscopic interactions emerge at the macroscopic level. Statistical Physics concepts and methods are then the meaningful methodology to study the problem. This book discusses the influence of the particle/particle and particle/substrate interaction rules on the morphology of the obtained film. Based on the work of the author s phD thesis, interesting structures are discussed, emerging from simple interacting rules as the ones from random sequential adsorption process either in the presence of patterned substrates or during competitive adsorption of particles with different sizes. For the growth regime where diffusion of particles on the substrate cannot be neglected, the influence of the flux of impinging particles on the nucleation and growth of islands is also covered.
We have developed new approaches to synthesize superhard/ultrastrong thin films and coatings by chemical vapor deposition (CVD) of unimolecular precursors, and to monitor and characterize the film-growth process in situ and in real time. To this end, we have designed and constructed an ultrahigh vacuum CVD chamber fitted with energy-dispersive x-ray reflectivity (XRR) and multiple- beam optical stress sensor (MOSS) for in situ monitoring of surface morphology and stress evolution of the films under growth. Both of these techniques were applied to the CVD growth of boron and GaN films. We have synthesized novel precursors of C3N3P, Si4CN4, LiBC4N4, BC3N3, BeC2N2, MgC2N2 for CVD growth of films with properties of superhardness. We have also deposited thin films by CVD with the composition of Zr-B-Si-N via reactions of Zr(BH4)4 with SiH4, and Zr(BH4)4 with N(SiH3)4. The elastic constants cli and c44 of these films measured by Brillouin scattering in collaboration with Prof. Sooryakumar of Ohio State University produced results suggesting that films and coatings based on the Zr-B-Si-N system exhibit promising superhard properties.
The most important aspects of modern surface science are covered. All topics are presented in a concise and clear form accessible to a beginner. At the same time, the coverage is comprehensive and at a high technical level, with emphasis on the fundamental physical principles. Numerous examples, references, practice exercises, and problems complement this remarkably complete treatment, which will also serve as an excellent reference for researchers and practitioners. The textbook is idea for students in engineering and physical sciences.
Thin film technology is used in many applications such as microelectronics, optics, hard and corrosion resistant coatings and micromechanics, and thin films form a uniquely versatile material base for the development of novel technologies within these industries. Thin film growth provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films. Part one focuses on the theory of thin film growth, with chapters covering nucleation and growth processes in thin films, phase-field modelling of thin film growth and surface roughness evolution. Part two covers some of the techniques used for thin film growth, including oblique angle deposition, reactive magnetron sputtering and epitaxial growth of graphene films on single crystal metal surfaces. This section also includes chapters on the properties of thin films, covering topics such as substrate plasticity and buckling of thin films, polarity control, nanostructure growth dynamics and network behaviour in thin films. With its distinguished editor and international team of contributors, Thin film growth is an essential reference for engineers in electronics, energy materials and mechanical engineering, as well as those with an academic research interest in the topic. Provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films Focusses on the theory and modelling of thin film growth, techniques and mechanisms used for thin film growth and properties of thin films An essential reference for engineers in electronics, energy materials and mechanical engineering
This volume contains a selection of lectures and seminars given at the Ninth International Workshop on Instabilities and Nonequilibrium Structures which took place in Via del Mar, Chile, in December 2001. This book consists of two parts, the first one has three lectures written by Professors H.R. Brand, M. Moreau and L.S. Tuckerman. H.R. Brand gives an overview about reorientation and undulation instabilities in liquid crystals, M. Moreau presents recent results on biased tracer diffusion in lattice gases, finally, L.S. Tuckerman summarizes some numerical methods used in bifurcation problems. The second part consists of a collection of selected seminars which cover different topics in nonlinear physics, from an experimental, numerical and theoretical point of view. This book should appeal to mathematicians, physicists and engineers interested in dynamical systems, statistical mechanics, and nonequilibrium systems.
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
Thin films have an extremely broad range of applications from electronics and optics to new materials and devices. Collaborative and multidisciplinary efforts from physicists, materials scientists, engineers and others have established and advanced a field with key pillars constituting (i) the synthesis and processing of thin films, (ii) the understanding of physical properties in relation to the nanometer scale, (iii) the design and fabrication of nano-devices or devices with thin film materials as building blocks, and (iv) the design and construction of novel tools for characterization of thin films.Against the backdrop of the increasingly interdisciplinary field, this book sets off to inform the basics of thin film physics and thin film devices. Readers are systematically introduced to the synthesis, processing and application of thin films; they will also study the formation of thin films, their structure and defects, and their various properties — mechanical, electrical, semiconducting, magnetic, and superconducting. With a primary focus on inorganic thin film materials, the book also ventures on organic materials such as self-assembled monolayers and Langmuir-Blodgett films.This book will be effective as a teaching or reference material in the various disciplines, ranging from Materials Science and Engineering, Electronic Science and Engineering, Electronic Materials and Components, Semiconductor Physics and Devices, to Applied Physics and more. The original Chinese publication has been instrumental in this purpose across many Chinese universities and colleges.
“The importance of knowledge consists not only in its direct practical utility but also in the fact the it promotes a widely contemplative habit of mind; on this ground, utility is to be found in much of the knowledge that is nowadays labelled ‘useless’. ” Bertrand Russel, In Praise of Idleness, London (1935) “Why are scientists in so many cases so deeply interested in their work ? Is it merely because it is useful ? It is only necessary to talk to such scientists to discover that the utilitarian possibilities of their work are generally of secondary interest to them. Something else is primary. ” David Bohm, On creativity, Abingdon (1996) In this volume, the dynamical critical behaviour of many-body systems far from equilibrium is discussed. Therefore, the intrinsic properties of the - namics itself, rather than those of the stationary state, are in the focus of 1 interest. Characteristically, far-from-equilibrium systems often display - namical scaling, even if the stationary state is very far from being critical. A 1 As an example of a non-equilibrium phase transition, with striking practical c- sequences, consider the allotropic change of metallic ?-tin to brittle ?-tin. At o equilibrium, the gray ?-Sn becomes more stable than the silvery ?-Sn at 13. 2 C. Kinetically, the transition between these two solid forms of tin is rather slow at higher temperatures. It starts from small islands of ?-Sn, the growth of which proceeds through an auto-catalytic reaction.
Interdisciplinary research on superconducting oxides is the main focus of the contributions in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.
Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver sion, and protection and passivating layers. Indeed, one would be hard pressed to find many sophisticated modern optical and electronic devices which do not use thin films in one way or the other. With the impetus provided by industrial applications, the science and technology of thin films have undergone revolutionary development and even today continue to be recognized globally as frontier areas of RID work. Major technical developments in any field of science and technology are invariably accompanied by an explosion of published literature in the form of scientific publications, reviews, and books.