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Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Nanowires are an important sector of circuit design whose applications in very-large-scale integration design (VLSI) have huge impacts for bringing revolutionary advancements in nanoscale devices, circuits, and systems due to improved electronic properties of the nanowires. Nanowires are potential devices for VLSI circuits and system applications and are highly preferred in novel nanoscale devices due to their high mobility and high-driving capacity. Although the knowledge and resources for the fabrication of nanowires is currently limited, it is predicted that, with the advancement of technology, conventional fabrication flow can be used for nanoscale devices, specifically nanowires. Innovative Applications of Nanowires for Circuit Design provides relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology. The book covers advanced modeling concepts of nanowires along with their role as a key enabler for innovation in GLSI devices, circuits, and systems. While highlighting topics such as design, simulation, types and applications, and performance analysis of nanowires, this book is ideally intended for engineers, practitioners, stakeholders, academicians, researchers, and students interested in electronics engineering, nanoscience, and nanotechnology.
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Nanoelectronic Devices for Hardware and Software Security has comprehensive coverage of the principles, basic concepts, structure, modeling, practices, and circuit applications of nanoelectronics in hardware/software security. It also covers the future research directions in this domain. In this evolving era, nanotechnology is converting semiconductor devices dimensions from micron technology to nanotechnology. Nanoelectronics would be the key enabler for innovation in nanoscale devices, circuits, and systems. The motive for this research book is to provide relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology for hardware/software security. There are numerous challenges in the development of models for nanoscale devices (e.g., FinFET, gate-all-around devices, TFET, etc.), short channel effects, fringing effects, high leakage current, and power dissipation, among others. This book will help to identify areas where there are challenges and apply nanodevice and circuit techniques to address hardware/software security issues.
This book features a collection of high-quality, peer-reviewed papers presented at the Third International Conference on Intelligent Computing and Communication (ICICC 2019) held at the School of Engineering, Dayananda Sagar University, Bengaluru, India, on 7 – 8 June 2019. Discussing advanced and multi-disciplinary research regarding the design of smart computing and informatics, it focuses on innovation paradigms in system knowledge, intelligence and sustainability that can be applied to provide practical solutions to a number of problems in society, the environment and industry. Further, the book also addresses the deployment of emerging computational and knowledge transfer approaches, optimizing solutions in various disciplines of science, technology and healthcare.