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A practical, hands-on guidebook for the efficient modeling of VCSELs Vertical Cavity Surface Emitting Lasers (VCSELs) are a unique type of semiconductor laser whose optical output is vertically emitted from the surface as opposed to conventional edge-emitting semiconductor lasers. Complex in design and expensive to produce, VCSELs nevertheless represent an already widely used laser technology that promises to have even more significant applications in the future. Although the research has accelerated, there have been relatively few books written on this important topic. Analysis and Design of Vertical Cavity Surface Emitting Lasers seeks to encapsulate this growing body of knowledge into a single, comprehensive reference that will be of equal value for both professionals and academics in the field. The author, a recognized expert in the field of VCSELs, attempts to clarify often conflicting assumptions in order to help readers achieve the simplest and most efficient VCSEL models for any given problem. Highlights of the text include: * A clear and comprehensive theoretical treatment of VCSELs * Detailed derivations for understanding the operational principles of VCSELs * Mathematical models for the investigation of electrical, optical, and thermal properties of VCSELs * Case studies on the mathematical modeling of VCSELs and the implementation of simulation programs
This dissertation, "Modeling of Vertical Cavity Surface Emitting Lasers" by Wai-man, Man, 文惠民, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3122319 Subjects: Semiconductor lasers Quantum wells
Starting from basic principles, this book provides coverage of the operation and design of Vertical Cavity Surface Emitting Lasers (VCSELs). It includes original experimental work, backed up by calculations and theoretical analysis, and reviews work already done in the field.
Since first coming into existence in the early 90s, the vertical-cavity surface-emitting laser (VCSEL) has made several quantum leaps in performance. The performance of VCSELs now exceeds that of edge-emitting lasers in many respects, and offers a superior optical beam and much easier monolithic integrability. As the VCSEL technology improves furth
Two models have been developed to simulate a vertical-cavity surface-emitting laser (VCSEL). The first model is a two-dimensional time-dependent solution of Maxwell`s equations, with frequency-independent bulk dielectric and absorption coefficients. These bulk coefficients depend upon the material, lattice temperature, and carrier concentration. This field model is coupled with a frequency-dependent gain model that describes the quantum well regions in the time domain. Treatment of frequency-dependent media in a finite-difference time-domain code is computationally intensive. On the other hand, because the volume of the active region is small relative to the volume of the distributed laser cavity, the computational overhead is reasonable. A semi-empirical transport model is used to describe the bulk transport, which drives the quantum well transport. In addition, the semi-empirical model provides a spatial distribution for the lattice temperature and carrier concentrations. The second model is a three-dimensional solution of Maxwell`s equations. The three-dimensional model can be used for cold-cavity calculations. The two-dimensional code generates the dielectric and absorption coefficients assuming azimuthal symmetry, providing the initial conditions for the three-dimensional calculation.
The authors present a comprehensive numerical model for vertical-cavity surface-emitting lasers that includes all major processes effecting cw operation of axisymmetric devices. In particular, the model includes a description of the 2D transport of electrons and holes through the cladding layers to the quantum well(s), diffusion and recombination processes of these carriers within the wells, the 2D transport of heat throughout the device, and a multi-lateral-mode effective index optical model. The optical gain acquired by photons traversing the quantum wells is computed including the effects of strained band structure and quantum confinement. They employ the model to predict the behavior of higher-order lateral modes in proton-implanted devices, and to provide an understanding of index-guiding in devices fabricated using selective oxidation.
Vertical cavity surface emitting lasers (VCSELs) have emerged as a key optical source in digital and RF photonics systems. Investigation to date has involved VCSELs of "standard" DBR construction. However, incorporation of a controllable saturable absorber inside the lasing cavity results in a wealth of new dynamic characteristics. The focus of this program is on designs and experiments of a novel three contact vertical cavity laser with an intracavity quantum-well. Contrary to all existing laser-absorber integration we achieved an independent control of the gain region and the quantum-well absorber. This allowed the device to be used as an integrated optical source and modulator, or alternatively, providing nonlinearity for self-pulsation and optical feedback. An unprecedentedly wide range of application is made possible with the unique properties and flexibilities. Under this program we graduated 3 PhD students, one post-doctoral researcher and one MS student. The grant also helped to start several new students. We published over 20 publications, filed one patent application and presented 12 invited talks at international conferences. This invention brought forth a completely new class of VCSELs. Many other research organizations have followed our lead and published their new designs and inputs. We believe the impact of this work is a far-reaching one.
To simulate vertical cavity surface emitting lasers (VCSELs), the authors are developing a three-dimensional, time-dependent field-gain model with absorption in bulk dielectric regions and gain in quantum well regions. Since the laser linewidth is narrow, the bulk absorption coefficient is assumed to be independent of frequency with a value determined by the material and the lattice temperature. In contrast, the frequency-dependent gain regions must be solved consistently in the time domain. Treatment of frequency-dependent media in a finite-difference time-domain code is computationally intensive. However, because the volume of the quantum well regions is small relative to the volume of the multilayer dielectric (MLD) mirror regions, the computational overhead is reasonable. A key issue is the calculation of the fields in the MLD mirror regions. Although computationally intensive, good agreement has been obtained between simulation results and matrix equation solutions for the reflection coefficient, transmission coefficient, and bandwidth of MLD mirrors. The authors discuss the development and testing of the two-dimensional field-gain model. This field-gain model will be integrated with a carrier transport model to form the self-consistent laser code, VCSEL.