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This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design. This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
This book constitutes the thoroughly refereed post-conference proceedings of the 9th International Conference on Numerical Methods and Applications, NMA 2018, held in Borovets, Bulgaria, in August 2018. The 56 revised regular papers presented were carefully reviewed and selected from 61 submissions for inclusion in this book. The papers are organized in the following topical sections: numerical search and optimization; problem-driven numerical method: motivation and application, numerical methods for fractional diffusion problems; orthogonal polynomials and numerical quadratures; and Monte Carlo and Quasi-Monte Carlo methods.
"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Get up to speed with the future of logic switch design with this indispensable introduction to post-CMOS technologies.
Carbon nanotubes (CNTs), discovered in 1991, have been a subject of intensive research for a wide range of applications. In the past decades, although carbon nanotubes have undergone massive research, considering the success of silicon, it has, nonetheless, been difficult to appreciate the potential influence of carbon nanotubes in current technology. The main objective of this book is therefore to give a wide variety of possible applications of carbon nanotubes in many industries related to electron device technology. This should allow the user to better appreciate the potential of these innovating nanometer sized materials. Readers of this book should have a good background on electron devices and semiconductor device physics as this book presents excellent results on possible device applications of carbon nanotubes. This book begins with an analysis on fabrication techniques, followed by a study on current models, and it presents a significant amount of work on different devices and applications available to current technology.
Introducing the interdisciplinary field of interface chemistry modelling across a wide range of academic disciplines and industry sectors. Ten original research articles are presented that bridge knowledge acquisition and practical work, providing a starting point for the research and development of applications. The book describes the characterization of interfaces at the nanoscale, using a wide range of key nanomaterials, such as graphene, TiO2, zeolites, semimetals, and organic polymers; and the study of their different physical chemical properties, such as catalysis, adsorption, friction, diffusion, and the characterization of nanocomposites and heterojunctions, with many different industrial applications. The resulting collection of papers is equally relevant for advanced students (senior and graduate) and for engineers and scientists from a variety of different academic backgrounds working in the multidisciplinary field of nanotechnology.