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Plasma Immersion Ion Implantation (PIII) is a burgeoning technology in the field of surface modification as well as in semiconductor electronics. Modelling of this technique is an important aspect especially in VLSI/ULSI technology. In this work, more generalized and better realistic dynamic sheath analytical models for collisionless and collisional PIII process, incorporating sheath dynamics and its transient evaluation for multiple species plasma, have been suggested that can help in monitoring the doping and in studying the behaviour of a PIII system. The basics about PIII process technique, its applications and analytical models developed by various researchers have first been reviewed and then the analytical models suggested by the author have been discussed. To demonstrate the validity of these models, calculations for pure He, pure Ar and mixed plasma of He and Ar ions, have also been discussed in this work. This book is useful both as a graduate text as well as a research monograph for upcoming scientists, especially those who are interested in exploring the theoretical aspect of PIII technique at an analytical level.
Metal Plasma Immersion Ion Implantation and Deposition (MePIIID) is a hybrid process combining cathodic arc deposition and plasma immersion ion implantation. The properties of metal plasma produced by vacuum arcs are reviewed and the consequences for MePIIID are discussed. Different version of MePIIID are described and compared with traditional methods of surface modification such as ion beam assisted deposition (IBAD). MePIIID is a very versatile approach because of the wide range of ion species and energies used. In one extreme case, films are deposited with ions in the energy range 20--50 eV, and at the other extreme, ions can be implanted with high energy (100 keV or more) without film deposition. Novel features of the technique include the use of improved macroparticle filters; the implementation of several plasma sources for multi-element surface modification; tuning of ion energy during implantation and deposition to tailor the substrate-film intermixed layer and structure of the growing film; simultaneous pulsing of the plasma potential (positive) and substrate bias (negative) with a modified Marx generator; and the use of high ion charge states.