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Presents fundamental theories and simulations of the spatio-temporal dynamics and quantum fluctuations in semiconductor lasers. The dynamic interplay of light and matter is theoretically described by taking into account microscopic carrier dynamics, spatially dependent light-field propagation and the influence of spontaneous emission and noise.
Broad-area lasers are edge-emitting semiconductor lasers with a wide lateral emission aperture. This feature enables high output powers but also diminishes the lateral beam quality and results in their inherently non-stationary behavior. Research in the area is driven by application, and the main objective is to increase the brightness, which includes both output power and lateral beam quality. To understand the underlying spatio-temporal phenomena and to apply this knowledge in order to reduce costs for brightness optimization, a self-consistent simulation tool taking all essential processes into account is vital. Firstly, in this work a quasi-three-dimensional opto-electronic and thermal model is presented that describes essential qualitative characteristics of real devices well. Time-dependent traveling-wave equations are utilized to characterize the inherently non-stationary optical fields, which are coupled to dynamic rate equations for the excess carriers in the active region. This model is extended by an injection-current-density model to accurately include lateral current spreading and spatial hole burning. Furthermore, a temperature model is presented that includes short-time local heating near the active region as well as the formation of a stationary temperature profile. Secondly, the reasons of brightness degradation, i.e. the origins of power saturation and the spatially modulated field profile, are investigated. And lastly, designs that mitigate those effects limiting the lateral brightness under pulsed and continuous-wave operation are discussed. Amongst those designs a novel “chessboard laser” is presented that utilizes longitudinal-lateral gain-loss modulation and an additional phase tailoring to obtain a very low far-field divergence.
Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. Gives a broad overview of concepts with concise explanations illustrated by real results. Compares different levels of modeling, from simple analytical models to complex numerical models. Discusses practical methods of model validation. Includes an overview of numerical techniques.
This thesis investigates passively mode-locked semiconductor lasers by numerical methods. The understanding and optimization of such devices is crucial to the advancement of technologies such as optical data communication and dual comb spectroscopy. The focus of the thesis is therefore on the development of efficient numerical models, which are able both to perform larger parameter studies and to provide quantitative predictions. Along with that, visualization and evaluation techniques for the rich spatio-temporal laser dynamics are developed; these facilitate the physical interpretation of the observed features. The investigations in this thesis revolve around two specific semiconductor devices, namely a monolithically integrated three-section tapered quantum-dot laser and a V-shaped external cavity laser. In both cases, the simulations closely tie in with experimental results, which have been obtained in collaboration with the TU Darmstadt and the ETH Zurich. Based on the successful numerical reproduction of the experimental findings, the emission dynamics of both lasers can be understood in terms of the cavity geometry and the active medium dynamics. The latter, in particular, highlights the value of the developed simulation tools, since the fast charge-carrier dynamics are generally not experimentally accessible during mode-locking operation. Lastly, the numerical models are used to perform laser design explorations and thus to derive recommendations for further optimizations.
Get hands-on experience of optoelectronic device design and simulation using numerical methods.
Parallel Scientific Computing and Optimization introduces new developments in the construction, analysis, and implementation of parallel computing algorithms. This book presents 23 self-contained chapters, including survey chapters and surveys, written by distinguished researchers in the field of parallel computing. Each chapter is devoted to some aspects of the subject: parallel algorithms for matrix computations, parallel optimization, management of parallel programming models and data, with the largest focus on parallel scientific computing in industrial applications. This volume is intended for scientists and graduate students specializing in computer science and applied mathematics who are engaged in parallel scientific computing.
Starting from the basics of semiconductor lasers with emphasis on the generation of high optical output power the reader is introduced in a tutorial way to all key technologies required to fabricate high-power diode-laser sources. Various applications are exemplified.