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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2005.
This book explains mechanical and thermal reliability for modern memory packaging, considering materials, processes, and manufacturing. In the past 40 years, memory packaging processes have evolved enormously. This book discusses the reliability and technical challenges of first-level interconnect materials, packaging processes, advanced specialty reliability testing, and characterization of interconnects. It also examines the reliability of wire bonding, lead-free solder joints such as reliability testing and data analyses, design for reliability in hybrid packaging and HBM packaging, and failure analyses. The specialty of this book is that the materials covered are not only for second-level interconnects, but also for packaging assembly on first-level interconnects and for the semiconductor back-end on 2.5D and 3D memory interconnects. This book can be used as a text for college and graduate students who have the potential to become our future leaders, scientists, and engineers in the electronics and semiconductor industry.
This book highlights important achievements and challenges in advanced interconnects and low-k dielectrics as employed in the microelectronics industry. The replacement of Al alloys with Cu along with the introduction of new barrier materials to protect Cu from chemical attack, and the utilization of new dielectric materials with a lower relative dielectric constant k than SiO2 in multilevel metallization structures of increasing complexity, are the major themes of evolution in this field. Invited reviews illustrate the significant progress that has been achieved as well as the challenges that remain. Contributed papers presented by researchers from different countries demonstrate progress on current topics using a truly multidisciplinary approach.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.
The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Enabled by the development and introduction of new materials, the semiconductor industry continues to follow Moore's law into 32nm and 22nm technologies. Advanced interconnect structures require the use of porous dielectrics with further reduced k-values and even weaker mechanical properties, as well as much thinner metallization liners. In addition, the increasing resistivity of Cu at decreasing dimensions must be addressed in order to maintain the performance of continuously shrinking devices. To deal with these issues, and to maintain the reliability of the interconnects, innovations in materials, processes and architectures are needed. This book brings together researchers from around the world to exchange the latest advances in materials, processes, integration and reliability in advanced interconnects and packaging, and to discuss interconnects for emerging technologies. Papers from a joint session with Symposium F, Packaging, Chip-Package Interactions and Solder Materials Challenges, are also included and focus on 3D chip stacking and molecular electronics.
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.