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Reliability concerns have forced interconnect systems to scale more slowly than devices. As a result, reliability engineers and scientists are now responsible for much of the performance and lifetime gains anticipated in the microelectronics industry. To achieve these gains, the interconnect must be viewed as a complex system with many types of reliability issues. A critical understanding of electromigration, stress-induced voiding, mechanical integrity, thermal performance, chemical effects, and oxide reliability are necessary. And of course, new models and materials will likely be necessary to improve the interconnect system for future needs. This book brings together researchers from academia and industry to discuss fundamental mechanisms and phenomena in the reliability field. Topics include: novel measurement techniques; microstructural effects; reliability modelling; stress effects; advanced inter-connect reliability; adhesion and fracture; and packaging reliability issues.
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.