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This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
The continual evolution of integrated circuit architecture places ever-increasing demands on the metal and dielectric thin films used in fabricating these circuits. Not only must these materials meet performance and manufacturability requirements, they must also be highly reliable for many years under operating conditions. A thorough understanding of the failure mechanisms and the effect of processing conditions and material properties on reliability is required to achieve this, particularly if it is to be done while minimizing cost and maximizing performance. This book brings together researchers from academia and industry to discuss fundamental mechanisms and phenomena in the reliability field. Topics include: solder and barrier-layer reliability; electromigration modeling; electromigration in interconnects; advanced measurement techniques; mechanical behavior of back-end materials and adhesion and fracture.
This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
The fabrication of Si- and compound semiconductor-based devices involves a number of steps ranging from material growth to pattern definition by lithography, and ultimately, pattern transfer by etching/deposition. The key to device manufacturing, however, is reproducibility, low cost and high yield. Diagnostic techniques allow correlation between processing and actual device performance to be established. Researchers from universities, industry and government come together in this book to examine the advances in diagnostic techniques that provide critical information on structural, optical and electrical properties of semiconductor devices, as well as monitoring techniques for equipment/processes for control and feedback. The overriding goal is for rapid, accurate materials characterization, both in situ and ex situ. Topics include: in situ diagnostics; proximal probe microscopies; optical probes of devices and device properties; spectroscopic ellipsometry/structural diagnostics; and material analysis - X-ray techniques, strain measurements and passivation.
While the effects of spontaneous ordering or composition modulation on the properties of semiconductors and optoelectronic devices have been studied with great interest over the past several years, an understanding of the physics and chemistry of these two related phenomena is still in its infancy. This book brings together researchers from around the world to address issues concerning the physics, chemistry and growth parameters for spontaneous ordering and composition modulation. Developments in the use of artificial patterning to obtain new structured materials on a microscopic scale are featured. Advances in characterization techniques are also presented. Topics include: spontaneous ordering; self-assembled structures and quantum dots; self-organized epitaxial structures; composition modulation studies and optoelectronic materials.
This book focuses on the fractal aspects of materials and disordered systems. Disorder plays a critical role in many naturally occurring and manufactured materials, both at the microscopic level (e.g., glasses) and the macroscopic level (e.g., foams, dendritic alloys, porous rock). The book addresses the dynamical processes involved in the formation and characterization of a wide range of disordered materials. Topics include: porous media; colloids; chemical reactions; dynamical aspects of the liquid-glass transition; disordered materials and surfaces and scaling and nanostructures.