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This book, first published in 2002, discusses challenges facing the implementation of an affordable tunable RF and microwave device technology. Low cost, tunable, microwave devices will have a tremendous impact on a variety of commercial and military systems, including tunable band-select filters for wireless communications, phase shifters and true time-delay devices for electronic scanning antennas, tunable radiating structures for frequency hopping, and tunable transformers to reduce RF impedance mismatch. Papers address topics from materials issues through devices and even a system-level demonstration of electronic beam steering. Specific materials issues discussed include: new tunable materials; issues of tunability, preparation and optimization of bulk and thin-film properties; materials, surface, and interface characterization; evaluation of material loss and loss mechanisms; effects of microstructure; and temperature stability. Phase shifters are featured and a new device concept for variable true time delay versus phase shift is introduced. A paraelectric lens is used to demonstrate electronic beam steering of an antenna at 10 GHz with about 2 dB of loss.
Challenges facing the implementation of an affordable tunable RF and microwave device technology are discussed in these papers from an April 2002 meeting. Materials issues and devices are examined, with information on new tunable materials, issues of preparation and optimization of bulk and think film properties, material and surface characterization, evaluation of material loss and loss mechanisms, and effects of microstructure. At the device level, phase shifters are discussed and a new device concept for variable true time delay versus phase shift is introduced. At the system level, a paraelectric lens is used to demonstrate electronic beam steering of an antenna. Tidrow is affiliated with the US Army Research Laboratory. Annotation copyrighted by Book News, Inc., Portland, OR
The purpose of this symposium was to bring together researchers from a broad range of disciplines to discuss the challenges facing the implementation of an affordable tunable RF and microwave device technology. Low cost, tunable, microwave devices will have a tremendous impact on a variety of commercial and military systems, including, but not limited to, tunable band-select filters for wireless communications, phase shifters and true time delay devices for electronic scanning antennas, tunable radiating structures for frequency hopping, and tunable transformers to reduce RF impedance mismatch. The papers of this proceedings discuss a wide range of topics from materials issues through devices and even a system level demonstration of electronic beam steering. Specific materials issues discussed are: new tunable materials; issues of tunability, preparation and optimization of bulk and thin film properties; materials, surface, and interface characterization; evaluation of material loss and loss mechanisms; effects of microstructure; and temperature stability. At the device level, phase shifters are discussed and a new device concept for variable true time delay versus phase shift is introduced. At the system level, a paraelectric lens is used to demonstrate electronic beam steering of an antenna at 10 GHz with about 2 dB of loss.
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
This volume combines the proceedings of Symposium K, Materials and Devices for Optoelectronics and Photonics, and Symposium L, Photonic Crystals--From Materials to Devices, both from the 2002 MRS Spring Meeting in San Francisco. The two symposia served as a unique meeting place where a community of materials scientists and device-oriented engineers could present their latest results. Papers from Symposium K concentrate on materials for solid-state lighting, with particular emphasis on nitrides and other high-bandgap semiconductors and quantum dots, as well as materials for optical waveguides and interconnects. Presentations from Symposium L discuss theoretical methods and materials and fabrication techniques for 2D and 3D photonic crystals, with special emphasis on tunability of photonic crystals.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
The objective of this 2003 volume from the Materials Research Society is twofold - to provide an overview of advances in membrane science and technology and to enhance communication among membrane researchers from a variety of disciplines including chemistry, biology, biotechnology, chemical engineering and materials science. Membranes can be used for inert or reactive separations in a variety of fields including gas purification, water treatment, energy storage and conversion, bio-technology and biomedicine. The book brings together scientists involved in the entire spectrum of modern approaches to membrane science and technology to address synthesis, characterization and transport properties and their use in established and emerging applications. Topics include: membrane synthesis and preparation; surface modification and additives; hybrid and composite membranes; membrane characterization; transport phenomena in membranes; charged membranes and ion transfer; gas permeation and separation; pervaporation and vapor permeation; dense membranes for hydrogen separation; applications in biotechnology and biomedicine; and membrane R&D for industrial and emerging applications.
Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.