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The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.
In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal
This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.
This book is a comprehensive text on the physics of semiconductors and nanostructures for a large spectrum of students at the final undergraduate level studying physics, material science and electronics engineering. It offers introductory and advanced courses on solid state and semiconductor physics on one hand and the physics of low dimensional semiconductor structures on the other in a single text book. Key Features Presents basic concepts of quantum theory, solid state physics, semiconductors, and quantum nanostructures such as quantum well, quantum wire, quantum dot and superlattice In depth description of semiconductor heterojunctions, lattice strain and modulation doping technique Covers transport in nanostructures under an electric and magnetic field with the topics: quantized conductance, Coulomb blockade, and integer and fractional quantum Hall effect Presents the optical processes in nanostructures under a magnetic field Includes illustrative problems with hints for solutions in each chapter Physics of Semiconductors and Nanostructures will be helpful to students initiating PhD work in the field of semiconductor nanostructures and devices. It follows a unique tutorial approach meeting the requirements of students who find learning the concepts difficult and want to study from a physical perspective.
Over the last two decades, spin transistors that operate using both charge and spin properties of electrons have motivated extensive studies of injection, detection and manipulation of electronic spin current in various material systems. Dilute magnetic semiconductors, in which the spin polarized charge carriers are coupled to the magnetic moment, are of particular interest due to their compatible lattice structures and similar growth methods to current Si and GaAs technology. The first part of this thesis focuses on the structural, magnetic and magnetotransport properties of magnetically doped GaN and 2D MoS2. The Gd doped AlN/GaN heterostructures are grown by plasma assisted molecular beam epitaxy. The Gd atoms are [delta]-doped at the AlN/GaN heterointerface where the two dimensional electron gas (2DEG) forms. These samples exhibit defect-induced room temperature ferromagnetism with an easy axis along the c-axis. However, the nonlinear Hall resistivity does not track the magnetization in these Gd doped samples indicating the lack of coupling between the conduction electrons in the 2DEG and the Gd-induced ferromagnetism. This makes Gd doped GaN not useful as a dilute magnetic semiconductor. Mn doped few-layer MoS2 samples synthesized via sulfurization of Mn thin film on sapphire are fabricated in the aim of realizing a 2D dilute magnetic semiconductor. However, these samples mainly show paramagnetism implying the lack of ferromagnetic coupling between the Mn dopants.
This comprehensive volume covers the latest research on high magnetic fields in semiconductor physics presented at the 16th International Conference (SemiMag 16), held in Tallahassee, Florida, August 2-8, 2004.The book features papers from more than 130 participants including the work of the foremost experts in the fields.Much of the most cutting-edge research is covered by the contributions as well as a special focused session on the recently discovered microwave-induced zero resistance effect.
A comprehensive treatment of the fundamentals of semiconductor physics and materials science. The first edition of the Survey of Semiconductor Physics set the standard for the multifaceted exploration of semiconductor physics. Now, Dr. Karl B?er, one of the world's leading experts in solid-state physics, with assistance from a team of the fields top researchers, expands this coverage in the Second Edition. Completely updated and substantially expanded, the Survey of Semiconductor Physics, Second Edition covers the basic elements in the entire field of semiconductor physics, emphasizing the materials and surface science involved. The Second Edition uses similar theoretical approaches and analyses for the basic material classes: crystalline, amorphous, quantum structures, and organics. The first volume provides thorough coverage of the structure of semiconductors, including: Phonons Energy bands Photons as they interact with the semiconductor and other particles Defects Generation and recombination Kinetics Part I of the Volume 2 begins with a thorough treatment of the carrier transport in homogeneous semiconductors, creating the context for the studies of inhomogeneous semiconductors that consume the majority of the text. The editors' primary concerns are the effects and implications of surfaces, interfaces, inhomogeneous doping, and space charges upon the electronic transport. Part II provides a general overview of the types of abrupt material inhomogeneities that are produced by interfaces and surfaces. Part III presents a detailed mathematical analysis of the interrelation between space charges, fields, and carrier transport, applying these calculations to a wide array of specific examples. Returning to his stated emphasis on practical application, B?er then focuses on the material preparations that are essential to produce semiconductor devices in Part IV and examines two specific examples of semiconductors-solar cells and light-emitting diodes-in Part V. In both volumes, extensive appendices simplify searches for important formulae and tables. An elaborate word index and reference listings allow readers to use the reference in multiple ways to discover expanding literature; to explore similarities and connecting principles in other fields; to find out how others in adjacent fields came up with intriguing solutions to similar problems; and to obtain a broad overview of the entire field of semiconductor physics.
The third, partly revised and enlarged edition of this introductory reference summarizes the terms and definitions, most important phenomena, and regulations occurring in the physics, chemistry, technology, and application of nanostructures. A representative collection of fundamental terms and definitions from quantum physics and chemistry, special mathematics, organic and inorganic chemistry, solid state physics, material science and technology accompanies recommended secondary sources for an extended study of any given subject. Each of the more than 2,200 entries, from a few sentences to a page in length, interprets the term or definition in question and briefly presents the main features of the phenomena behind it. Additional information in the form of notes ("First described in", "Recognition", "More details in") supplements the entries and gives a historical perspective of the subject with reference to further sources. Ideal for answering questions related to unknown terms and definitions among undergraduate and PhD students studying the physics of low-dimensional structures, nanoelectronics, and nanotechnology.