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This series of books, which is published at the rate of about one per year, addresses fundamental problems in materials science. The contents cover a broad range of topics from small clusters of atoms to engineering materials and involve chemistry, physics, materials science and engineering, with length scales ranging from Ångstroms up to millimeters. The emphasis is on basic science rather than on applications. Each book focuses on a single area of current interest and brings together leading experts to give an up-to-date discussion of their work and the work of others. Each article contains enough references that the interested reader can access the relevant literature. Thanks are given to the Center for Fundamental Materials Research at Michigan State University for supporting this series. M.F. Thorpe, Series Editor E-mail: thorpe @ pa.msu.edu East Lansing, Michigan PREFACE One of the most challenging problems in the study of structure is to characterize the atomic short-range order in materials. Long-range order can be determined with a high degree of accuracy by analyzing Bragg peak positions and intensities in data from single crystals or powders. However, information about short-range order is contained in the diffuse scattering intensity. This is difficult to analyze because it is low in absolute intensity (though the integrated intensity may be significant) and widely spread in reciprocal space.
Designed for the undergraduate and postgraduate students of physics, materials science and metallurgical engineering, this text explains the theory of X-ray diffraction starting from diffraction by an electron to that by an atom, a crystal, and finally ending with a diffraction by a conglomerate of atoms either in the single crystal or in the polycrystal stage. This Second Edition of the book includes a new chapter on Electron Diffraction as electron diffraction along with X-ray diffraction are complementary to each other and are also included in the curriculum. The book amply blends the theory with major applications of X-ray diffraction, including those of direct analysis of lattice defects by X-ray topography, orientation texture analysis, chemical analysis by diffraction as well as by fluorescence. KEY FEATURES : Set of numerical problems along with solutions Details of some different experimental techniques Unsolved problems and Review Questions to grasp the concepts.
The papers presented in this volume of Advances in X-Ray Analysis were chosen from those presented at the Fourteenth Annual Conference on the Applications of X-Ray Analysis. This conference, sponsored by the Metallurgy Division of the Denver Research Institute, University of Denver, was held on August 24,25, and 26, 1965, at the Albany Hotel in Denver, Colorado. Of the 56 papers presented at the conference, 46 are included in this volume; also included is an open discussion held on the effects of chemical com bination on X-ray spectra. The subjects presented represent a broad scope of applications of X-rays to a variety of fields and disciplines. These included such fields as electron-probe microanalysis, the effect of chemical combination on X-ray spectra, and the uses of soft and ultrasoft X-rays in emission analysis. Also included were sessions on X-ray diffraction and fluor escence analysis. There were several papers on special topics, including X-ray topography and X-ray absorption fine-structure analysis. William L. Baun contributed considerable effort toward the conference by organizing the session on the effect of chemical combination on X-ray spectra fine structure. A special session was established through the excellent efforts of S. P. Ong on the uses and applica tions of soft X-rays in fluorescent analysis. We offer our sincere thanks to these men, for these two special sessions contributed greatly to the success of the conference.
Diffraction from Materials provides the basic information concerning crystal symmetry, the kinematic scattering theory, as well as the physical properties of x-rays, electrons, and neurons. This book explores the crystalline nature of metals, semiconductors, and insulators. Organized into eight chapters, this volume starts with an overview of the basic ideas associated with the arrangements of atoms in crystals to help readers understand why diffraction studies are useful in learning about crystals. This book considers the analytical and geometrical methods to represent the symmetry relationships for the atoms in crystals. Other chapters examine the production of radiation suitable for diffraction from materials. The final chapter examines the various techniques for x-ray topography, including the Schulz technique, the Guinier and Tennevin technique, and the Berg–Barret method. This book is a valuable resource for electrical, civil, mechanical, and chemical engineers. This text will also be useful to materials scientists, chemists, biologists, and physicists.
The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec tronic modifications itinduces.
This book introduces and details the key facets of Combined Analysis—an x-ray and/or neutron scattering methodology which combines structural, textural, stress, microstructural, phase, layer, or other relevant variable or property analyses in a single approach. The author starts with basic theories related to diffraction by polycrystals and some of the most common combined analysis instrumental set-ups are detailed. Powder diffraction data treatment is introduced and in particular, the Rietveld analysis is discussed. The book also addresses automatic phase indexing—a necessary step to solve a structure ab initio. Since its effect prevails on real samples where textures are often stabilized, quantitative texture analysis is also detailed. Also discussed are microstructures of powder diffraction profiles; quantitative phase analysis from the Rietveld analysis; residual stress analysis for isotropic and anisotropic materials; specular x-ray reflectivity, and the various associated models. Finally, the book introduces the combined analysis concept, showing how it is superior to the view presented when we look at only one part of the analyses. This book shows that the existence of texture in a specimen can be envisaged as a way to decouple ordinarily strongly correlated parameters, as measured for instance in powder diagrams, and to examine and detail deeper material characterizations in a single methodology.
Until comparatively recently, trace analysis techniques were in general directed toward the determination of impurities in bulk materials. Methods were developed for very high relative sensitivity, and the values determined were average values. Sampling procedures were devised which eliminated the so-called sampling error. However, in the last decade or so, a number of developments have shown that, for many purposes, the distribution of defects within a material can confer important new properties on the material. Perhaps the most striking example of this is given by semiconductors; a whole new industry has emerged in barely twenty years based entirely on the controlled distribu tion of defects within what a few years before would have been regarded as a pure, homogeneous crystal. Other examples exist in biochemistry, metallurgy, polyiners and, of course, catalysis. In addition to this of the importance of distribution, there has also been a recognition growing awareness that physical defects are as important as chemical defects. (We are, of course, using the word defect to imply some dis continuity in the material, and not in any derogatory sense. ) This broadening of the field of interest led the Materials Advisory Board( I} to recommend a new definition for the discipline, "Materials Character ization," to encompass this wider concept of the determination of the structure and composition of materials. In characterizing a material, perhaps the most important special area of interest is the surface.
This book has grown out of our shared experience in the development of the Stanford Synchrotron Radiation Laboratory (SSRL), based on the electron-positron storage ring SPEAR at the Stanford Linear Accelerator Center (SLAC) starting in Summer, 1973. The immense potential of the photon beam from SPEAR became obvious as soon as experiments using the beam started to run in May, 1974. The rapid growth of interest in using the beam since that time and the growth of other facilities using high-energy storage rings (see Chapters 1 and 3) demonstrates how the users of this source of radiation are finding applications in an increasingly wide variety of fields of science and technology. In assembling the list of authors for this book, we have tried to cover as many of the applications of synchrotron radiation, both realized already or in the process of realization, as we can. Inevitably, there are omissions both through lack of space and because many projects are at an early stage. We thank the authors for their efforts and cooperation in producing what we believe is the most comprehensive treatment of synchrotron radiation research to date.