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This comprehensive volume, edited by a senior technical staff member at SEMATECH, is the authoritative reference book on EUV source technology. The volume contains 38 chapters contributed by leading researchers and suppliers in the EUV source field. Topics range from a state-of-the-art overview and in-depth explanation of EUV source requirements, to fundamental atomic data and theoretical models of EUV sources based on discharge-produced plasmas (DPP) and laser-produced plasmas, to a description of prominent DPP and LPP designs and other technologies for producing EUV radiation. Additional topics include EUV source metrology and components (collectors, electrodes), debris mitigation, and mechanisms of component erosion in EUV sources. The volume is intended to meet the needs of both practitioners of the technology and readers seeking an introduction to the subject.
Semiconductor lithography is one of the key steps in the manufacturing of integrated silicon-based circuits. In fabricating a semiconductor device such as a transistor, a series of hot processes consisting of vacuum film deposition, oxidations, and dopant implantation are all patterned into microscopic circuits by the wet processes of lithography. Lithography, as adopted by the semiconductor industry, is the process of drawing or printing the pattern of an integrated circuit in a resist material. The pattern is formed and overlayed to a previous circuit layer as many as 30 times in the manufacture of logic and memory devices. With the resist pattern acting as a mask, a permanent device structure is formed by subtractive (removal) etching or by additive deposition of metals or insulators. Each process step in lithography uses inorganic or organic materials to physically transform semiconductors of silicon, insulators of oxides, nitrides, and organic polymers, and metals, into useful electronic devices. All forms of electromagnetic radiation are used in the processing. Lithography is a mUltidisciplinary science of materials, processes, and equipment, interacting to produce three-dimensional structures. Many aspects of chemistry, electrical engineering, materials science, and physics are involved. The purpose of this book is to bring together the work of many scientists and engineers over the last 10 years and focus upon the basic resist materials, the lithographic processes, and the fundamental principles behind each lithographic process.
This book is devoted to the physics of electron-beam, ion-beam, optical, and x-ray lithography. The need for this book results from the following considerations. The astonishing achievements in microelectronics are in large part connected with successfully applying the relatively new technology of processing (changing the prop erties of) a material into a device whose component dimensions are submicron, called photolithography. In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer. The smallest dimensions of the device components are limited by the diffraction of the light when the pattern is transferred and are approximately the same as the wavelength of the light. Photolithography by light having a wavelength of A ~ 0.4 flm has made it possible to serially produce integrated circuits having devices whose minimal size is 2-3 flm in the 4 pattern and having 10-105 transistors per circuit.