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The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size
This book provides a comprehensive overview of the rapidly developing field of molecular electronics. It focuses on our present understanding of the electrical conduction in single-molecule circuits and provides a thorough introduction to the experimental techniques and theoretical concepts. It will also constitute as the first textbook-like introduction to both the experiment and theory of electronic transport through single atoms and molecules. In this sense, this publication will prove invaluable to both researchers and students interested in the field of nanoelectronics and nanoscience in general.Molecular Electronics is self-contained and unified in its presentation. It may be used as a textbook on nanoelectronics by graduate students and advanced undergraduates studying physics and chemistry. In addition, included are previously unpublished material that will help researchers gain a deeper understanding into the basic concepts involved in the field of molecular electronics.
The Advanced Study Institute on "Photoionization and Other Probes of Many-Electron Interactions" was held at the Centre "Les Cigales" in Carry-Ie-Rouet (France), from August 31st till September 13th 1975. The Institute was sponsored by the Scienti fic Affairs Division of NATO. The "Centre National de la Recher che Scientifique" (France) gave also partial support to the French participants and the National Science Foundation (U. S . A. ) to the American participants. A total of 18 lecturers, and 54 students selected among more than 120 applicants, attended the Institute. Over the last few years, substantial progress has been made in the experimental study of photon- or electron interactions with atoms. In particular, the g. rowing number of facilities created to use the synchrotron radiation makes now possible the realization of new types of experiments. The accumulation of new results showed clearly it was necessary to introduce electron correlations in the theoretical models in order to explain the existence and the probability of a large number of processes, in particular multiple processes. Thus large progress has also been made in the theore tical description of the excitation of the electronic systems and their interactions. It was the purpose of this Institute to bring together theoreticians and experimentalists in order to provide an opportunity to present in details the state of the art, in experiment as well as in theory, and to favor discussions on future experimen tal and theoretical studies.
This self-contained text describes the underlying theory and approximate quantum models of real nanodevices for nanotechnology applications.
Introduces many-body theory of modern quantum statistical mechanics to graduate students in physics, chemistry, engineering and biology.