Download Free Ionizing Radiation Effects In Mos Oxides Book in PDF and EPUB Free Download. You can read online Ionizing Radiation Effects In Mos Oxides and write the review.

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
An approach for hardening metal oxide semiconductor (MOS) transistors to ionizing radiation by reducing the thickness of the gate oxide is presented. It is shown that Si gate, n-channel MOS field-effect transistors with oxides 200 A thick continue to operate in the enhancement mode after irradiation to 1,000,000 rads (Si) with a positive bias applied to the gate during the irradiation. This represents a considerable improvement over conventional thick-oxide (approximately 1000-A) devices, which go into the depletion mode of operation at 100,000 rads (Si). The thin-oxide devices after exposure to pulsed ionizing radiation showed improved performance over that of thick-oxide devices. It was found also that device operation following irradiation depended on the source-drain spacing (Channel length): Shortening the channel length leads to an increased shift of the threshold voltage induced by irradiation. (Author).
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO2 interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Contents: Oxide studies--Hole and electron transport in SiO2 films, Charge transport studies in SiO2: processing effects and implications for radiation hardening, Ionizing dose rate effects in MOS devices, Experiments on MOS capacitors fabricated on a p-type silicon substrate, Ion microanalyzer measurements on SiO2 films, Effects of bias polarity on current flow in SiO2 under electron beam injection, Studies of charge transport and charge buildup in pure SiO2 and Al+-implanted pure SiO2, Determination of hole mobility in SiO2 films; Semiconductor studies.
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena. Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology’s Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and development. The book also showcases some key application areas of micro-electro-mechanical-systems (MEMS) that have reached the commercial realm. Capitalizing on Dr. Kaul’s considerable technical experience with micro- and nanotechnologies and her extensive research in prestigious academic and industrial labs, the book offers a fresh perspective on application-driven research in micro- and nanoelectronics, including MEMS. Chapters explore how rapid developments in this area are transitioning from the lab to the market, where new and exciting materials, devices, and manufacturing technologies are revolutionizing the electronics industry. Although many micro- and nanotechnologies still face major scientific and technological challenges and remain within the realm of academic research labs, rapid advances in this area have led to the recent emergence of new applications and markets. This handbook encapsulates that exciting recent progress by providing high-quality content contributed by international experts from academia, leading industrial institutions—such as Hewlett-Packard—and government laboratories including the U.S. Department of Energy’s Sandia National Laboratory. Offering something for everyone, from students to scientists to entrepreneurs, this book showcases the broad spectrum of cutting-edge technologies that show significant promise for electronics and related applications in which nanotechnology plays a key role.