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Several beam-solid interaction techniques have been developed that can either stand alone or be used in connection with others for materials processing, for fabrication of devices with enhanced electro-optical and mechanical properties, and with enhanced resistance to corrosion and erosion. For example, advances in focused ion beams (FIB) have brought out-of-reach ideas and applications to fruition. This book from MRS focuses on the developments in ion-beam-assisted processing of materials and reviews successful applications of the techniques. Topics include: fundamentals of ion-solid interactions; ion-beam mixing; radiation damage; insulators and wide bandgap materials; polymers; optical materials; plasma and ion-assisted techniques; metals and tribology; focused ion beams; fundamental semiconductor processing and compound semiconductors.
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
While the effects of spontaneous ordering or composition modulation on the properties of semiconductors and optoelectronic devices have been studied with great interest over the past several years, an understanding of the physics and chemistry of these two related phenomena is still in its infancy. This book brings together researchers from around the world to address issues concerning the physics, chemistry and growth parameters for spontaneous ordering and composition modulation. Developments in the use of artificial patterning to obtain new structured materials on a microscopic scale are featured. Advances in characterization techniques are also presented. Topics include: spontaneous ordering; self-assembled structures and quantum dots; self-organized epitaxial structures; composition modulation studies and optoelectronic materials.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Comprehensive guide to an important materials science technique for students and researchers.
Laser processing has been used in a wide variety of applications and materials such as semiconductors, superconductors, ceramics, polymers and metals. Lasers provide a controlled source of atomic and electronic excitations involving nonequilibrium phenomena that lend themselves to processing of novel materials and structures. The range of laser-solid interactions involving electronic excitation, melting and evaporation result in the formation of novel phases, selective gas excitations, surface modification and low-temperature thin-film deposition. This book from MRS focuses on the use of lasers in both the fundamental understanding and applied aspects of laser-solid and laser-gas interactions relevant to materials processing. Applications featured include thin-film transistors formed by laser-induced crystallization of amorphous silicon, diamond coatings and micromachining. Topics include: fundamentals of laser-solid interactions; fundamentals of pulsed laser ablation; pulsed laser deposition; novel applications of laser processing; laser-driven formation of nanocrystals; laser annealing; surface modification and etching; and laser-assisted chemical vapor deposition.
III-V semiconductors have continued to find new applications in optical data transmission, full-color displays, automotive electronics and personal communication systems. Complex epitaxial growth, processing, device design and circuit architecture are all necessary for realization of these elements. This book brings together the diverse group of scientists and researchers that are required to develop the next-generation devices. The wide bandgap nitrides, GaN, AlN, InN and their alloys are featured. The commercial availability of blue- and green-light-emitting diodes based on the InGaN/AlGaN system, and the recent announcement of pulsed operation of a laser diode, have stimulated interest in the growth, characterization and processing of these materials. Potential applications in high-temperature/high-power electronics appear promising because of the good transport properties of these nitrides. Topics include: growth and characterization; photonics and processing; electronics and processing; wide bandgap semiconductors and novel devices and processing.
This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
This book focuses on the fractal aspects of materials and disordered systems. Disorder plays a critical role in many naturally occurring and manufactured materials, both at the microscopic level (e.g., glasses) and the macroscopic level (e.g., foams, dendritic alloys, porous rock). The book addresses the dynamical processes involved in the formation and characterization of a wide range of disordered materials. Topics include: porous media; colloids; chemical reactions; dynamical aspects of the liquid-glass transition; disordered materials and surfaces and scaling and nanostructures.
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.