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This coherent monograph describes and explains quantum phenomena in two-dimensional (2D) electron systems with extremely strong internal interactions, which cannot be described by the conventional Fermi-liquid approach. The central physical objects considered are the 2D Coulomb liquid, of which the average Coulomb interaction energy per electron is much higher than the mean kinetic energy, and the Wigner solid. The text provides a new and comprehensive review of the remarkable properties of Coulomb liquids and solids formed on the free surface of liquid helium and other interfaces. This book is intended for graduate students and researchers in the fields of quantum liquids, electronic properties of 2D systems, and solid-state physics. It includes different levels of sophistication so as to be useful for both theorists and experimentalists. The presentation is largely self-contained, and also describes some instructive examples that will be of general interest to solid-state physicists.
This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.
Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.
The physics of strongly correlated fermions and bosons in a disordered envi ronment and confined geometries is at the focus of intense experimental and theoretical research efforts. Advances in material technology and in low temper ature techniques during the last few years led to the discoveries of new physical of atomic gases and a possible metal phenomena including Bose condensation insulator transition in two-dimensional high mobility electron structures. Situ ations were the electronic system is so dominated by interactions that the old concepts of a Fermi liquid do not necessarily make a good starting point are now routinely achieved. This is particularly true in the theory of low dimensional systems such as carbon nanotubes, or in two dimensional electron gases in high mobility devices where the electrons can form a variety of new structures. In many of these sys tems disorder is an unavoidable complication and lead to a host of rich physical phenomena. This has pushed the forefront of fundamental research in condensed matter towards the edge where the interplay between many-body correlations and quantum interference enhanced by disorder has become the key to the understand ing of novel phenomena.
This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.
Physical Phenomena at High Magnetic Fields IV (PPHMF-IV) was the fourth in the series of conferences sponsored by the National High Magnetic Field Laboratory (NHMFL). The success of PPHMF-I, II and III, held in 1991, 1995 and 1998 respectively, encouraged the organizers to once again bring together experts in scientific research areas where high magnetic fields play an important role, to critically assess the current status of research in these areas, and to discuss promising new directions in science, as well as applications which are in the forefront of these fields.
Quantum mechanics transcends and supplants classical mechanics at the atomic and subatomic levels. It provides the underlying framework for many subfields of physics, chemistry and materials science, including condensed matter physics, atomic physics, molecular physics, quantum chemistry, particle physics, and nuclear physics. It is the only way we can understand the structure of materials, from the semiconductors in our computers to the metal in our automobiles. It is also the scaffolding supporting much of nanoscience and nanotechnology. The purpose of this book is to present the fundamentals of quantum theory within a modern perspective, with emphasis on applications to nanoscience and nanotechnology, and information-technology. As the frontiers of science have advanced, the sort of curriculum adequate for students in the sciences and engineering twenty years ago is no longer satisfactory today. Hence, the emphasis on new topics that are not included in older reference texts, such as quantum information theory, decoherence and dissipation, and on applications to nanotechnology, including quantum dots, wires and wells. - This book provides a novel approach to Quantum Mechanics whilst also giving readers the requisite background and training for the scientists and engineers of the 21st Century who need to come to grips with quantum phenomena - The fundamentals of quantum theory are provided within a modern perspective, with emphasis on applications to nanoscience and nanotechnology, and information-technology - Older books on quantum mechanics do not contain the amalgam of ideas, concepts and tools necessary to prepare engineers and scientists to deal with the new facets of quantum mechanics and their application to quantum information science and nanotechnology - As the frontiers of science have advanced, the sort of curriculum adequate for students in the sciences and engineering twenty years ago is no longer satisfactory today - There are many excellent quantum mechanics books available, but none have the emphasis on nanotechnology and quantum information science that this book has
The electron liquid paradigm is at the basis of most of our current understanding of the physical properties of electronic systems. Quite remarkably, the latter are nowadays at the intersection of the most exciting areas of science: materials science, quantum chemistry, nano-electronics, biology and quantum computation. Accordingly, its importance can hardly be overestimated. During the past 20 years the field has witnessed momentous developments, which are partly covered in this new volume. Advances in semiconductor technology have allowed the realizations of ultra-pure electron liquids whose density, unlike that of the ones spontaneously occurring in nature, can be tuned by electrical means, allowing a systematic exploration of both strongly and weakly correlated regimes. Most of these system are two- or even one-dimensional and can be coupled together in the form of multi-layers or multi-wires, opening vast observational possibilities. On the theoretical side, quantum Monte Carlo methods have allowed an essentially exact determination of the ground-state energy of the electron liquid, and have provided partial answers to the still open question of the structure of its phase diagram. Starting from the 1980s some truly revolutionary concepts have emerged, which are well represented in this volume.
Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.
High-field magnetsâ€"those that operate at the limits of the mechanical and/or electromagnetic properties of their structural materialsâ€"are used as research tools in a variety of scientific disciplines. The study of high magnetic fields themselves is also important in many areas such as astrophysics. Because of their importance in scientific research and the possibility of new breakthroughs, the National Science Foundation asked the National Research Council to assess the current state of and future prospects for high-field science and technology in the United States. This report presents the results of that assessment. It focuses on scientific and technological challenges and opportunities, and not on specific program activities. The report provides findings and recommendations about important research directions, the relative strength of U.S. efforts compared to other countries, and ways in which the program can operate more effectively.