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This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase diagrams in the solid and liquid phases in correlation with the segregation of dopants are treated on a macro- and microscale. Fluid dynamic aspects with different types of convection in melts and solutions are discussed. Various growth techniques for semiconducting materials in connection with the use of external field (magnetic fields and microgravity) are described. Crystal characterization as the overall assessment of the grown crystal is treated in detail with respect to - crystal defects - crystal quality - field of application Introduction to Crystal Growth and Characterization is an ideal textbook written in a form readily accessible to undergraduate and graduate students of crystallography, physics, chemistry, materials science and engineering. It is also a valuable resource for all scientists concerned with crystal growth and materials engineering.
Introduction to Crystal Growth: Principles and Practice teaches readers about crystals and their origins. It offers a historical perspective of the subject and includes background information whenever possible. The first section of this introductory book takes readers through the historical development and motivation of the field of crystal growth. With more than 40 years of experience in the field, the author covers nucleation, two-dimensional layer growth mechanism, defects in crystals, and screw dislocation theory of crystal growth. He also explains some aspects of the important subject of phase diagrams. The second section focuses on the experimental techniques of crystal growth. For practicing crystal growers, the book provides nuts-and-bolts techniques and tips. It discusses the major techniques categorized by solid–solid, liquid–solid, and vapor–solid equilibria and describes characterization techniques essential to measuring the quality of grown crystals.
Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers. The book begins with "Growth Histories of Mineral Crystals" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.
This volume offers an overview of the growth of shaped crystals (oxides, fluorides, etc.) by the micro-pulling-down technique. Both melt and solution (flux) growth are considered. The advantages and disadvantages of the method are discussed in detail and compared with related crystal-growth processes. The authors attempt to give a practical introduction to this technique, thereby also explaining how its application can help to solve problems commonly encountered in other melt-growth methods.
The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.
Calorimetry, as a technique for thermal analysis, has a wide range of applications which are not only limited to studying the thermal characterisation (e.g. melting temperature, denaturation temperature and enthalpy change) of small and large drug molecules, but are also extended to characterisation of fuel, metals and oils. Differential Scanning Calorimetry is used to study the thermal behaviours of drug molecules and excipients by measuring the differential heat flow needed to maintain the temperature difference between the sample and reference cells equal to zero upon heating at a controlled programmed rate. Microcalorimetry is used to study the thermal transition and folding of biological macromolecules in dilute solutions. Microcalorimetry is applied in formulation and stabilisation of therapeutic proteins. This book presents research from all over the world on the applications of calorimetry on both solid and liquid states of materials.
This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.
This book introduces the principles and techniques of crystal growth by the flux method, which is arguably the most useful way to obtain millimeter- to centimeter-sized single crystals for physical research. As it is possible to find an appropriate solvent (“flux”) for nearly all inorganic materials, the flux method can be applied to the growth of many crystals ranging from transition metal oxides to intermetallic compounds. Both important principles and experimental procedures are described in a clear and accessible manner. Practical advice on various aspects of the experiment, which is not readily available in the literature, will assist the beginning graduate students in setting up the lab and conducting successful crystal growth. The mechanisms of crystal growth at an elementary level are also provided to better understand the techniques and to help in assessing the quality of the crystals. The book also contains many photographs of beautiful crystals with important physical properties of current interest, such as high-temperature superconductors, strongly correlated electronic systems, topological insulators, relaxor ferroelectrics, low-dimensional quantum magnets, non-linear optical materials, and multiferroics.