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As integrated circuit (IC) feature sizes scaled below a quarter of a micron, thereby defining the deep submicron (DSM) era, there began a gradual shift in the impact on performance due to the metal interconnections among the active circuit components. Once viewed as merely parasitics in terms of their relevance to the overall circuit behavior, the interconnect can now have a dominant impact on the IC area and performance. Beginning in the late 1980's there was significant research toward better modeling and characterization of the resistance, capacitance and ultimately the inductance of on-chip interconnect. IC Interconnect Analysis covers the state-of-the-art methods for modeling and analyzing IC interconnect based on the past fifteen years of research. This is done at a level suitable for most practitioners who work in the semiconductor and electronic design automation fields, but also includes significant depth for the research professionals who will ultimately extend this work into other areas and applications. IC Interconnect Analysis begins with an in-depth coverage of delay metrics, including the ubiquitous Elmore delay and its many variations. This is followed by an outline of moment matching methods, calculating moments efficiently, and Krylov subspace methods for model order reduction. The final two chapters describe how to interface these reduced-order models to circuit simulators and gate-level timing analyzers respectively. IC Interconnect Analysis is written for CAD tool developers, IC designers and graduate students.
Describes a variety of interconnect analysis techniques with different efficiency-accuracy tradeoffs. The authors survey very simple delay metrics that can be useful during the synthesis stage of IC design, higher order delay and signal integrity metrics suitable for physical design, and more accurate analysis methods appropriate for the final verification stages of chip design. The Elmore delay, asmptotic waveform evaluation, moment generation, passive reduced-order multiport models are covered. The final two chapters describe how to interface macromodels with circuit simulators and RC models with gate-delay models Annotation copyrighted by Book News, Inc., Portland, OR
Three-Dimensional Integrated Circuit Design, Second Eition, expands the original with more than twice as much new content, adding the latest developments in circuit models, temperature considerations, power management, memory issues, and heterogeneous integration. 3-D IC experts Pavlidis, Savidis, and Friedman cover the full product development cycle throughout the book, emphasizing not only physical design, but also algorithms and system-level considerations to increase speed while conserving energy. A handy, comprehensive reference or a practical design guide, this book provides effective solutions to specific challenging problems concerning the design of three-dimensional integrated circuits. Expanded with new chapters and updates throughout based on the latest research in 3-D integration: - Manufacturing techniques for 3-D ICs with TSVs - Electrical modeling and closed-form expressions of through silicon vias - Substrate noise coupling in heterogeneous 3-D ICs - Design of 3-D ICs with inductive links - Synchronization in 3-D ICs - Variation effects on 3-D ICs - Correlation of WID variations for intra-tier buffers and wires - Offers practical guidance on designing 3-D heterogeneous systems - Provides power delivery of 3-D ICs - Demonstrates the use of 3-D ICs within heterogeneous systems that include a variety of materials, devices, processors, GPU-CPU integration, and more - Provides experimental case studies in power delivery, synchronization, and thermal characterization
Proven 2D and 3D IC lead-free interconnect reliability techniques Reliability of RoHS-Compliant 2D and 3D IC Interconnects offers tested solutions to reliability problems in lead-free interconnects for PCB assembly, conventional IC packaging, 3D IC packaging, and 3D IC integration. This authoritative guide presents the latest cutting-edge reliability methods and data for electronic manufacturing services (EMS) on second-level interconnects, packaging assembly on first-level interconnects, and 3D IC integration on microbumps and through-silicon-via (TSV) interposers. Design reliable 2D and 3D IC interconnects in RoHS-compliant projects using the detailed information in this practical resource. Covers reliability of: 2D and 3D IC lead-free interconnects CCGA, PBGA, WLP, PQFP, flip-chip, lead-free SAC solder joints Lead-free (SACX) solder joints Low-temperature lead-free (SnBiAg) solder joints Solder joints with voids, high strain rate, and high ramp rate VCSEL and LED lead-free interconnects 3D LED and 3D MEMS with TSVs Chip-to-wafer (C2W) bonding and lead-free interconnects Wafer-to-wafer (W2W) bonding and lead-free interconnects 3D IC chip stacking with low-temperature bonding TSV interposers and lead-free interconnects Electromigration of lead-free microbumps for 3D IC integration
This book is jointly authored by leading academic and industry researchers. The material is unique in that it spans IC interconnect topics ranging from IBM's revolutionary copper process to an in-depth exploration into interconnect-aware computer architectures.
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
"...offers a tutorial guide to IC designers who want to move to the next level of chip design by unlocking the secrets of signal integrity." —Jake Buurma, Senior Vice President, Worldwide Research & Development, Cadence Design Systems, Inc. Covers signal integrity effects in high performance Radio Frequency (RF) IC Brings together research papers from the past few years that address the broad range of issues faced by IC designers and CAD managers now and in the future A Wiley-IEEE Press publication
This book focuses on the modelling methodology of microstrip interconnects, discussing various structures of single-input multiple-output (SIMO) tree interconnects for signal integrity (SI) engineering. Further, it describes lumped and distributed transmission line elements based on single-input single-output (SIMO) models of symmetric and asymmetric trees, and investigates more complicated phenomenon, such as interbranch coupling. The modelling approaches are based on the analytical methods using the Z-, Y- and T-matrices. The established method enables the S-parameters and voltage transfer function of SIMO tree to be determined. Providing illustrative results with frequency and time domain analyses for each tree interconnect structure, the book is a valuable resource for researchers, engineers, and graduate students in fields of analogue, RF/microwave, digital and mixed circuit design, SI and manufacturing engineering.
In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
In 2007 The Design, Automation and Test in Europe (DATE) conference celebrated its tenth anniversary. As a tribute to the chip and system-level design and design technology community, this book presents a compilation of the three most influential papers of each year. This provides an excellent historical overview of the evolution of a domain that contributed substantially to the growth and competitiveness of the circuit electronics and systems industry.