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This research and reference text provides up-to-date coverage of the latest research on hot carriers in semiconductors, with a focus on the background, theoretical approaches, measurements and physical understanding required to engage with the field. Pitched at an introductory level, it equips researchers transitioning from optics to fully understand the role of hot carriers in semiconductors, and is a core text for graduate courses in hot carrier phenomena.
Hot-Electron Transport in Semiconductors (Topics in Applied Physics).
This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.
A comprehensive account of the latest developments in the rapidly expanding area of Semiconductor Technology. Main topics covered include real space transfer/heterostructures, ultrafast studies, optical studies, transport theory, devices, ballistic transport, scattering processes and hot phonons, tunnelling, far infrared and magnetic field studies and impact ionization/noise/chaos. Other aspects include the use of femtosecond lasers in investigating transient hot carrier effects on femtosecond timescales, magnetotransport and carrier-carrier interactions.
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. - Topics covered include - Reduced dimensionality and quantum wells - Carrier-phonon interactions and hot phonons - Femtosecond optical studies of hot carrier - Ballistic transport - Submicron and resonant tunneling devices
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
The first edition of "Semiconductor Physics" was published in 1973 by Springer-Verlag Wien-New York as a paperback in the Springer Study Edition. In 1977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo "MIR", Mo scow. Since then new ideas have been developed in the field of semi conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or the determination of the fine struc ture constant from surface quantization in inversion layers. New tech niques such as molecular beam epitaxy which has made the realization of the Esaki superlattice possible, deep level transient spectroscopy, and refined a. c. Hall techniques have evolved. Now that the Viennese edition is about to go out of print, Springer-Verlag, Berlin-Heidelberg-New York is giving me the opportunity to include these new subjects in a monograph to appear in the Solid-State Sciences series. Again it has been the intention to cover the field of semiconductor physics comprehensively, although some chapters such as diffusion of hot carriers and their galvanomagnetic phenomena, as well as super conducting degenerate semiconductors and the appendices, had to go for commercial reasons. The emphasis is more on physics than on device as pects.
Real insight from leading experts in the field into the causes of the unique photovoltaic performance of perovskite solar cells, describing the fundamentals of perovskite materials and device architectures. The authors cover materials research and development, device fabrication and engineering methodologies, as well as current knowledge extending beyond perovskite photovoltaics, such as the novel spin physics and multiferroic properties of this family of materials. Aimed at a better and clearer understanding of the latest developments in the hybrid perovskite field, this is a must-have for material scientists, chemists, physicists and engineers entering or already working in this booming field.
The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.