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This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Faculties, publications and doctoral theses in departments or divisions of chemistry, chemical engineering, biochemistry and pharmaceutical and/or medicinal chemistry at universities in the United States and Canada.
Introduction to Thermoelectricity is the latest work by Professor Julian Goldsmid drawing on his 55 years experience in the field. The theory of the thermoelectric and related phenomena is presented in sufficient detail to enable researchers to understand their observations and develop improved thermoelectric materials. The methods for the selection of materials and their improvement are discussed. Thermoelectric materials for use in refrigeration and electrical generation are reviewed. Experimental techniques for the measurement of properties and for the production of thermoelements are described. Special emphasis is placed on nanotechnology which promises to yield great improvements in the efficiency of thermoelectric devices. Chapters are also devoted to transverse thermoelectric effects and thermionic energy conversion, both techniques offering the promise of important applications in the future.
This book outlines the principles of thermoelectric generation and refrigeration from the discovery of the Seebeck and Peltier effects in the nineteenth century through the introduction of semiconductor thermoelements in the mid-twentieth century to the more recent development of nanostructured materials. It is shown that the efficiency of a thermoelectric generator and the coefficient of performance of a thermoelectric refrigerator can be related to a quantity known as the figure of merit. The figure of merit depends on the Seebeck coefficient and the ratio of the electrical to thermal conductivity. It is shown that expressions for these parameters can be derived from the band theory of solids. The conditions for favourable electronic properties are discussed. The methods for selecting materials with a low lattice thermal conductivity are outlined and the ways in which the scattering of phonons can be enhanced are described. The application of these principles is demonstrated for specific materials including the bismuth telluride alloys, bismuth antimony, alloys based on lead telluride, silicon-germanium and materials described as phonon-glass electron-crystals. It is shown that there can be advantages in using the less familiar transverse thermoelectric effects and the transverse thermomagnetic effects. Finally, practical aspects of thermoelectric generation and refrigeration are discussed. The book is aimed at readers who do not have a specialised knowledge of solid state physics.
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene. Readers will gain an in-depth understanding of the electronic structure and optical, thermal, mechanical, vibrational, spin and plasmonic properties of each material, as well as the different techniques that can be used for their synthesis. Presenting a unified perspective on 2D materials, this is an excellent resource for graduate students, researchers and practitioners working in nanotechnology, nanoelectronics, nanophotonics, condensed matter physics, and chemistry.